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08N50E PDF Datasheet

The 08N50E is Fmp08n50e. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 08N50E
FMP08N50E

FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Equiv

Fuji Electric
Fuji Electric
pdf

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Recommended search results related to 08N50E

Part No Description ( Function) Manufacturers PDF
CMT08N50   POWER FIELD EFFECT TRANSISTOR

CMT08N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy

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Champion
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FMP08N50E   N-CHANNEL SILICON POWER MOSFET

FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche

Fuji Electric
Fuji Electric
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FMV08N50E   N-CHANNEL SILICON POWER MOSFET

datasheet39.com FMV08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0

Fuji Electric
Fuji Electric
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FTA08N50   MOSFET ( Transistor )

datasheet39.com FTP08N50/FTA08N50 500V N 沟道 MOS 场效应管 产品名称 ¾ ¾ ¾ ¾ ¾ 低的导通电阻 低的栅极电荷(典型值为33nC) 开关速度快 100%雪崩测试 符合RoHS标准/无铅封装 BVDSS 500V RDS(ON) (Max.) 0.9Ω ID 8.0A 产品应用 ¾ ¾

ARK
ARK
datasheet pdf
FTP08N50   MOSFET ( Transistor )

datasheet39.com FTP08N50/FTA08N50 500V N 沟道 MOS 场效应管 产品名称 ¾ ¾ ¾ ¾ ¾ 低的导通电阻 低的栅极电荷(典型值为33nC) 开关速度快 100%雪崩测试 符合RoHS标准/无铅封装 BVDSS 500V RDS(ON) (Max.) 0.9Ω ID 8.0A 产品应用 ¾ ¾

ARK
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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