Datasheet 0809LD60P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	0809LD60P	60 Watt / 28V / 1 Ghz LDMOS FET R.0.2P.991602-BEHRE 0809LD60P 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD60P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization	GHZ Technology

0809LD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
0809LD60P	60 Watt / 28V / 1 Ghz LDMOS FET R.0.2P.991602-BEHRE 0809LD60P 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD60P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes	GHZ Technology
0809LD60	60 Watt / 28V / 1 Ghz LDMOS FET R.0.2P.991602-BEHRE 0809LD60 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD60 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes g	GHZ Technology
0809LD30P	30 Watt / 28V / 1 Ghz LDMOS FET R.0.2P.991602-BEHRE 0809LD30P 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes	GHZ Technology

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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