No | Part number | Description ( Function ) | Manufacturers | |
1 | 0809LD30P | 30 Watt / 28V / 1 Ghz LDMOS FET R.0.2P.991602-BEHRE 0809LD30P 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness. CASE OUTLINE 55QU Common Sou |
GHZ Technology |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 0809LD30P |
Part No | Description ( Function) | Manufacturers | |
0809LD30 | 30 Watt / 28V / 1 Ghz LDMOS FET R.0.2P.991602-BEHRE 0809LD30 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes g |
GHZ Technology |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |