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0809LD30P PDF Datasheet

The 0809LD30P is 30 Watt / 28v / 1 Ghz Ldmos Fet. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 0809LD30P
30 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD30P 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness. CASE OUTLINE 55QU Common Sou

GHZ Technology
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Recommended search results related to 0809LD30P

Part No Description ( Function) Manufacturers PDF
0809LD30   30 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD30 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes g

GHZ Technology
GHZ Technology
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