|
|
Número de pieza | H7N1005DS | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de H7N1005DS (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! H7N1005DL, H7N1005DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS (on) = 85 mΩ typ.
• Low drive current
• Capable of 4.5 V gate drive
Outline
REJ03G1736-0100
Rev.1.00
Sep 19, 2008
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
123
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IAP Note 2
EAR Note 2
Pch Note 3
Tch
Tstg
Value
100
±20
12
30
12
8
6.4
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
REJ03G1736-0100 Rev.1.00 Sep 19, 2008
Page 1 of 8
1 page H7N1005DL, H7N1005DS
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
10 V
8
5V
4
VGS = 0, –5 V
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
8
7
IAP = 8 A
VDD = 50 V
6
duty < 0.1 %
Rg ≥ 50 Ω
5
4
3
2
1
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3 0.2
0.1
0.1
0.05
0.02
0.01
0.03 1 shot pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D.U.T
VDD
Avalanche Waveform
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
REJ03G1736-0100 Rev.1.00 Sep 19, 2008
Page 5 of 8
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet H7N1005DS.PDF ] |
Número de pieza | Descripción | Fabricantes |
H7N1005DL | Silicon N-Channel MOS FET | Renesas |
H7N1005DS | Silicon N-Channel MOS FET | Renesas |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |