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What is XC2408A816UR-G?

This electronic component, produced by the manufacturer "Torex Semiconductor", performs the same function as "1.6GHz ON/OFF Function LNA".


XC2408A816UR-G Datasheet PDF - Torex Semiconductor

Part Number XC2408A816UR-G
Description 1.6GHz ON/OFF Function LNA
Manufacturers Torex Semiconductor 
Logo Torex Semiconductor Logo 


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XC2408A816UR-G
1.6GHz ON/OFF Function LNA
ETR27006-001
GENERAL DESCRIPTION
The XC2408A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power
consumption using CMOS process, The XC2408 is designed for GPS band frequency (1.6GHz).
The IC's internal circuit can be placed in stand-by mode via the CE function, In the stand-by mode, consumption current is
greatly reduced and there is no need to add external ON/OFF control function like LDO.
External RBIAS can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply
.voltages are 3.45V, 3.00V, 2.85V and 1.80V.
APPLICATIONS
GPS band RF signal amplified
FEATURES
Noise Figure
: NF=0.96dB (TYP.) (@ 1.575GHz)
Low Power Consumption : 12.6mW (TYP.) (VDD=1.80V, RBIAS=92)
High Gain
: S21 =22.0dB (TYP.) (@ 1.575GHz)
CE Function
: CE “H” 1.1VVDD (1.71VVDD3.15V)
CE ”L” 0V0.4V
Operation Voltage Range : 1.71V3.63V
Output
: CMOS Output
50Driver Built-in
Operating Temperature Range : - 40℃~+ 85
Package
: USP-8A01
Environmentally Friendly : EU RoHS Compliant, Pb Free
TYPICAL APPLICATION CIRCUIT
TYPICAL PERFORMANCE
CHARACTERISTICS
Power Gain / Noise Figure vs. Frequency
TOP VIEW
VDD [V] (TYP.)
3.45
3.00
2.85
1.80
RBIAS []
360
270
240
92
* RBIAS should be used in 1% tolerance and
200ppm/
35
30
25
20
15
10
1
temperature stability.
XC2408A816
VDD=VCE=2.85V, Ta=25℃
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Frequency : f (GHz)
0.0
2
1/18

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XC2408A816UR-G equivalent
ELECTRICAL CHARACTERISTICS
XC2408A816UR-G
DC Characteristics
PARAMETER
SYMBOL
Power Supply Voltage
VDD
Current Circuit
Stand-by Current
CE "H" Level Voltage
CE "L" Level Voltage
IDD
ISTBY
VCEH
VCEL
CONDITIONS
RBIAS=360(*2)
RBIAS=270(*2)
RBIAS=240(*2)
RBIAS=92(*2)
1.71V VDD 3.63V (*1)
VCE=VDD
1.71V VDD 3.63V (*1)
VCE=0V
1.71V VDD 3.15V
3.15V<VDD 3.63V
-
MIN.
3.278
2.850
2.708
1.710
TYP.
3.450
3.000
2.850
1.800
MAX.
3.630
3.150
2.992
1.890
- 7.0 9.6
- - 0.1
1.1 - VDD
1.3 - VDD
0 - 0.4
(*1) For the relation of VDD and RBIAS, Please refer to the “Power Supply Voltage vs. RBIAS Table” below.
(*2) RBIAS should be used in 1% tolerance and 200ppm/ temperature stability.
UNITS
V
V
V
V
mA
A
V
V
V
Ta=25
CIRCUIT
AC Characteristics
PARAMETER
Power Gain
Input Return Loss
Output Return Loss
Isolation
Noise Figure (*1)
Input Power IP3
Input Power IP2
Input Power @ 1dB
Gain Conpression
SYMBOL
S21
S11
CONDITIONS
f=1.575GHz
f=1.575GHz
MIN.
16.0
-
VDD=VCE=2.85V, RBIAS=240, Ta=25
TYP. MAX. UNITS CIRCUIT
22.0 -
dB
7.0 -
dB
S22
f=1.575GHz
- 17.0 -
dB
S12
f=1.575GHz
- -33.0 -
dB
NF
f=1.575GHz
- 0.96 -
dB
IIP3
f=1.575GHz, 1.576GHz
- -15.5 -
dBm
IIP2
f=0.8GHz, 2.345GHz
- 13.2 - dBm
P1dB
f=1.575GHz
- -24.0 -
dBm
(*1) NF is the value excluding the substrate loss.
Power Supply Voltage vs. RBIAS
VDD [V]
RBIAS []
3.2783.630
360
2.8503.150
270
2.7082.992
240
1.7101.890
92
5/18


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Part Details

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Featured Datasheets

Part NumberDescriptionManufacturers
XC2408A816UR-GThe function is 1.6GHz ON/OFF Function LNA.Torex Semiconductor
Torex Semiconductor

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