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WILLAS
SO1T.0-A2S3URPFAlaCEsMtiOcU-NETnScCHaOpTsTKuYlBaAtReRTIErRaRnECsTiIsFItEoRSrs-20V- 200V
SOD-123+ PACKAGE
FM120-M+
C945 THRU
FM1200-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
TRANSISToOptRim(izNePbNoa)rd space.
FEATURE•• HLoigwhpcouwrreernltocsasp, ahibgihlitey,ffliocwiefnocryw. ard voltage drop.
z Ex•ceHlilgehnstuhrgFeE cLainpaebairliittyy.
z Lo•wGnuoairsdering for overvoltage protection.
• Ultra high-speed switching.
z Pb•-FSrileiceonpeapcitakxaiagl eplainsaar cvhaipil,ambelteal silicon junction.
SOD-123H
SOT-230.146(3.7)
0.130(3.3)
1. BASE
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Ro•HLSeapd-rforedeupcatrtfsomr epeat ceknvinirgoncmoednetalssutaffnidxa”rGds”of
MIL-STD-19500 /228
Ha•loRgoHeSnpfrroedeuctpfroor pdaucckitngfocrodpeascufkfiixn"gG"code suffix “H”
2. EMITTER
3. COLLECTOR
Halogen free product for packing code suffix "H"
MARKINMGe:CcRhanical data
• Epoxy : UL94-V0 rated flame retardant
MAXIMU• MCaRseA:TMINoldGeSd p(lTaas=tic2,5S℃ODu-1n2le3Hss otherwise noted)
Symbol
•
Terminals
:PlaPteadratemrmetinear ls,
solderable
per
,
MIL-STD-750
Value
Method 2026
VCBO • PCoolallreitcyto: rI-nBdaicsaeteVdobltay gceathode band
60
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Unit
V
Dimensions in inches and (millimeters)
VCEO • MCooullnetcintogrP-Eomsiittitoenr :VAonltyage
50 V
VEBO • WEemigithtet r:-ABpapsreoxViomltaatgeed 0.011 gram
5V
IC CollecMtoAr XCIuMrrUenMt -RCoAnTtiInNuGouSs AND ELECTRICAL CHAR15A0CTERISTICS mA
PCRatings atC2o5l℃lectaomr bPieonwt etermDpiesrsaiptuaretiounnless otherwise specified.
200
mW
TJSingle phaJsuenhcatilof nwaTveem, 6p0eHrazt,ureresistive of inductive load.
150
℃
For
Tstg
capacitive load, derate current
Storage Temperature
by
20%
-55-150
℃
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
ELECMMaaTrxkRiminIugCmCAoRdLeecuCrrHenAt PReAakCRTevEerRseISVoTltIaCgeS (Ta=25℃VRuRnM less12o20therw1330ise sp41e04cified51)05
16
60
18 10
115 120
80 100 150 200
Maximum RPMarSaVmoletatgeer
SymVbRoMl S
T1e4st con2d1itions28
35 Min42 Typ 56 Max70 Unit105
140
Maximum DC Blocking Voltage
Collector-base breakdown voltage
Maximum Average Forward Rectified Current
V(BR)CBVODC
IO
20 30
IC=100uA, IE=0
40
50 60
60
1.0
80
100 150
V
200
C ollector-emitter breakdown voltage
V(BR)CE O
IC=1mA , IB=0
50
V
Peak Forward
Emsuitpteerrim-bpoasseed
Surge Current 8.3 ms single half
obnrreaatekddlooawd (nJEvDoElCtamgeethod)
sine-wVav(eBR)EBIFOSM
IE=0.1mA, IC=0
5 30
V
CoTllyepcictaol rThceurmt-aolfRf ecsuisrtraenncet (Note 2)
CoTllyepcictaol rJucnuctti-oonfCf acpuarcriteanncte (Note 1)
Operating Temperature Range
EmSittotreargecuTet-mopfefrcatuurrereRnatnge
ICBORΘJA
ICERCJ
TJ
IEBTOSTG
VCB=60V, IE= 0
VCE=55V-5,R5=to10+1M2Ω5
VEB=5V , IC=0
40
120
- 65 to +175
0.1 uA
0.1 uA
-55 to +150
0.1 uA
DC current gain CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
hFE(1)
VCE=6 V , IC=1mA
130
400
hFES(Y2V)MFBOL
FVMC1E2=0-6MHVF,M13I0C-=M00H..51F0Mm1A40-MH
FM150-MH4F0M160-MH
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
CoMllaexcimtourm-eAmveirtateger sRaevtuerrsaetiCounrrevnot lattag@eT A=25℃VCE(sat)IR
BaRsaete-edmDCittBelrocskaintguVraotltiaogne voltage @T A=125℃VBE(sat)
IC=100mA, IB=10mA
IC=100mA, IB=10mA
0.5 0.3 V
10 1 V
TrNanOTsEitSio: n frequency
fT VCE=6V,IC=10mA,f =30 MHz 150
MHz
Co1l-lMeceatosurreoduattp1uMtHcZaapnadcaiptpalniecd ereverse voltage of 4.0 VCDoCb.
2- Thermal Resistance From Junction to Ambient
N oise figure
NF
VCB=10V,IE=0,f=1MHZ
VCE=6V,IC=0.1mA
Rg=10kΩ,f=1kMHZ
3.0 pF
4 10 dB
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
2012-06
130-200
200-400
WILLAS ELECTRONIC COR
2012-0
WILLAS ELECTRONIC CORP.