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PDF C945 Data sheet ( Hoja de datos )

Número de pieza C945
Descripción Plastic-Encapsulate Transistors
Fabricantes WILLAS 
Logotipo WILLAS Logotipo

C945 pdf


1. 2SC945, NPN - TO 92






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No Preview Available ! C945 Hoja de datos, Descripción, Manual

WILLAS
SO1T.0-A2S3URPFAlaCEsMtiOcU-NETnScCHaOpTsTKuYlBaAtReRTIErRaRnECsTiIsFItEoRSrs-20V- 200V
SOD-123+ PACKAGE
FM120-M+
C945 THRU
FM1200-M
Pb Free Produc
Features
Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
TRANSISToOptRim(izNePbNoa)rd space.
FEATURE•• HLoigwhpcouwrreernltocsasp, ahibgihlitey,ffliocwiefnocryw. ard voltage drop.
z ExceHlilgehnstuhrgFeE cLainpaebairliittyy.
z LowGnuoairsdering for overvoltage protection.
Ultra high-speed switching.
z Pb-FSrileiceonpeapcitakxaiagl eplainsaar cvhaipil,ambelteal silicon junction.
SOD-123H
SOT-230.146(3.7)
0.130(3.3)
1. BASE
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
RoHLSeapd-rforedeupcatrtfsomr epeat ceknvinirgoncmoednetalssutaffnidxarGdsof
MIL-STD-19500 /228
HaloRgoHeSnpfrroedeuctpfroor pdaucckitngfocrodpeascufkfiixn"gG"code suffix “H”
2. EMITTER
3. COLLECTOR
Halogen free product for packing code suffix "H"
MARKINMGe:CcRhanical data
Epoxy : UL94-V0 rated flame retardant
MAXIMUMCaRseA:TMINoldGeSd p(lTaas=tic2,5SODu-1n2le3Hss otherwise noted)
Symbol
Terminals
:PlaPteadratemrmetinear ls,
solderable
per
,
MIL-STD-750
Value
Method 2026
VCBO PCoolallreitcyto: rI-nBdaicsaeteVdobltay gceathode band
60
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Unit
V
Dimensions in inches and (millimeters)
VCEO MCooullnetcintogrP-Eomsiittitoenr :VAonltyage
50 V
VEBO WEemigithtet r:-ABpapsreoxViomltaatgeed 0.011 gram
5V
IC CollecMtoAr XCIuMrrUenMt -RCoAnTtiInNuGouSs AND ELECTRICAL CHAR15A0CTERISTICS mA
PCRatings atC2o5llectaomr bPieonwt etermDpiesrsaiptuaretiounnless otherwise specified.
200
mW
TJSingle phaJsuenhcatilof nwaTveem, 6p0eHrazt,ureresistive of inductive load.
150
  For
Tstg
capacitive load, derate current
Storage Temperature
by
20%
-55-150
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
ELECMMaaTrxkRiminIugCmCAoRdLeecuCrrHenAt PReAakCRTevEerRseISVoTltIaCgeS (Ta=25VRuRnM less12o20therw1330ise sp41e04cified51)05
16
60
18 10
115 120
80 100 150 200
Maximum RPMarSaVmoletatgeer
SymVbRoMl S
T1e4st con2d1itions28
35 Min42 Typ 56 Max70 Unit105
140
Maximum DC Blocking Voltage
Collector-base breakdown voltage
Maximum Average Forward Rectified Current
V(BR)CBVODC
IO
20 30
IC=100uA, IE=0
40
50 60
60
1.0
80
100 150
V
200
C  ollector-emitter breakdown voltage
V(BR)CE  O
IC=1mA , IB=0
50  
V 
Peak Forward
Emsuitpteerrim-bpoasseed
Surge Current 8.3 ms single half
obnrreaatekddlooawd (nJEvDoElCtamgeethod)
sine-wVav(eBR)EBIFOSM
IE=0.1mA, IC=0
5 30
V
CoTllyepcictaol rThceurmt-aolfRf ecsuisrtraenncet (Note 2)
CoTllyepcictaol rJucnuctti-oonfCf acpuarcriteanncte (Note 1)
Operating Temperature Range
EmSittotreargecuTet-mopfefrcatuurrereRnatnge
ICBORΘJA
ICERCJ
TJ
IEBTOSTG
VCB=60V, IE=  0
 
VCE=55V-5,R5=to10+1M25
VEB=5V , IC=0
40
120
 
- 65 to +175
 0.1 uA
 0.1 uA
-55 to +150
0.1 uA
 
DC current gain CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
hFE(1)
VCE=6 V , IC=1mA
130
400
hFES(Y2V)MFBOL
FVMC1E2=0-6MHVF,M13I0C-=M00H..51F0Mm1A40-MH
FM150-MH4F0M160-MH
0.70
FM180-MH FM1100-MH
0.85
FM1150-MH
0.9
FM1200-MH
0.92
CoMllaexcimtourm-eAmveirtateger sRaevtuerrsaetiCounrrevnot lattag@eT A=25℃VCE(sat)IR
BaRsaete-edmDCittBelrocskaintguVraotltiaogne voltage @T A=125℃VBE(sat)
IC=100mA, IB=10mA
IC=100mA, IB=10mA
0.5 0.3 V
10 1 V
 
 
TrNanOTsEitSio: n frequency
fT VCE=6V,IC=10mA,f =30 MHz 150
MHz
Co1l-lMeceatosurreoduattp1uMtHcZaapnadcaiptpalniecd ereverse voltage of 4.0 VCDoCb.
2- Thermal Resistance From Junction to Ambient
N   oise figure
NF
VCB=10V,IE=0,f=1MHZ
VCE=6V,IC=0.1mA
Rg=10k,f=1kMHZ
3.0 pF
4 10 dB
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
2012-06
130-200
200-400
WILLAS ELECTRONIC COR
2012-0
WILLAS ELECTRONIC CORP.

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