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PDF AWB7228 Data sheet ( Hoja de datos )
| Número de pieza | AWB7228 | |
| Descripción | Small-Cell Power Amplifier Module | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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FEATURES
• InGaP HBT Technology
• -47 dBc ACPR @ 6 10 MHz, +27 dBm
• 27 dB Gain
• High Efficiency
• Low Transistor Junction Temperature
• Matched for a 50 Ω System
• Low Profile Miniature Surface Mount Package;
RoHS Compliant
• Multi-Carrier Capability
AWB7228
2.545 - 2.69 GHz
Small-Cell Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.2
APPLICATIONS
• LTE, WCDMA and HSDPA Air Interfaces
• FDD and TDD Systems
• Picocell, Femtocell, Home Nodes
• Customer Premises Equipment (CPE)
• Data Cards and Terminals
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7228 is a fully matched, Multi-Chip-Module
(MCM) designed for picocell, femtocell, and customer
premises equipment (CPE) applications. Its high
linearity and efficiency meet the extremely demanding
needs of small cell infrastructure architectures.
Designed for LTE,WCDMA and HSDPA air interfaces
operating in the 2.545 GHz to 2.69 GHz band, the
AWB7228 delivers up to +27 dBm of LTE (E-TM1.1)
power with an ACPR of -47 dBc. It operates from
a convenient +4.5 V supply and provides 27 dB of
gain. The device is manufactured using an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
Vcc 1 Vcc 2
RF Input
Matching
Network
Bias
Network
Matching
Network
Matching
Network
Bias
Network
Matching
Network
Power
Detector
VREF
VDET
Figure 1: Block Diagram
09/2012
RF Output
1 page  
AWB7228
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VREF voltage.
C1C515aannd CC1111: Seennotote
VRE F
C15 C11
0.1 µF
1000 pF
Vcc1C1* C2* C3
C4
100µF 10 µF 0.1µF 1000 pF
RFI N
VDET
R2
100 KΩ
C6
0.1µF
4.7 KΩ
R1
1VR E F
GND 2
GND 3
Vcc1
RFI N
4
5
GND 6
7VDET
AWB7228
14 GND
13 GND
12 RFOUT
11 Vcc2
10 GND
9 GND
C7
1000 pF
C8 C9*
0.1µF 10 µF
8 GND
RFOUT
C10*
Vcc2
C12*
100 µF 100 µF
* Optional
Note:
To achieve the RF Switching Time specifications listed in Table 4 the maximum recommended
capacitance on the VREF line is 0.01µF. The noise on the VREF line should be kept as low as
possible to minimize required capacitance.
Figure 3: Application Circuit Schematic
5
PRELIMINARY DATA SHEET - Rev 1.2
09/2012
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AWB7228.PDF ] | |
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