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PDF AO4302 Data sheet ( Hoja de datos )
| Número de pieza | AO4302 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4302
30V N-Channel MOSFET
General Description
30 36
Product Summary
The AO4302 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
30V
23A
< 4mΩ
< 5mΩ
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B TA=70°C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS, IAR
EAS, EAR
PD
TJ, TSTG
D
G
S
Maximum
30
±20
23
18
316
49
120
3.6
2.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
27
52
11
Max
35
65
15
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: February 2011
www.aosmd.com
Page 1 of 6
1 page  
AO4302
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
Rev 0: February 2011
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AO4302.PDF ] | |
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