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PDF 2SD669 Data sheet ( Hoja de datos )
| Número de pieza | 2SD669 | |
| Descripción | NPN Transistor | |
| Fabricantes | Transys | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD669 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transys
Electronics
LIMITED
TO-126C Plastic-Encapsulated Transistors
2SD669 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 1.5
Collector-base voltage
A
V(BR)CBO: 180 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=1mA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=160V, IE=0
VEB=4V, IC=0
VCE=5V, IC=150mA
VCE=5V, IC=500mA
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
180 V
120 V
5V
10 µA
10 µA
60 320
30
1V
1.5 V
140 MHz
14 pF
CLASSIFICATION OF hFE(1)
Rank
B
Range
60-120
C
100-200
D
160-320
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD669.PDF ] | |
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