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PDF MTEF1P15AN6 Data sheet ( Hoja de datos )
| Número de pieza | MTEF1P15AN6 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTEF1P15AN6
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 1/9
Description
The MTEF1P15AN6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTEF1P15AN6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage
Parameter
Gate-Source Voltage
TC=25 °C
Continuous Drain Current
TC=70 °C
TA=25 °C (Note 1)
TA=70 °C (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C
TA=25 °C
TA=70 °C
Operating Junction Temperature and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
-150
±20
-1.7
-1.4
-1.3
-1.0
-6.8
3.2
2.1
2
1.25
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 1)
MTEF1P15AN6
Symbol
Rth,j-c
RθJA
Value
39
62.5
Unit
°C/W
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 5/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
7
VDS=-10V
6
5
4
3
2
1
0
0 24 6
-VGS, Gate-Source Voltage(V)
Single Pulse Maximum Power Dissipation
1000
900
800 TJ(MAX)=150°C
700
TA=25°C
θJA=62.5°C/W
600
500
400
300
200
100
0
8 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width(s)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Power Derating Curve
Mounted on FR-4 board
with 1 in² pad area
20 40 60 80 100 120 140 160
TA, Ambient Temperature(℃)
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
Power Derating Curve
20 40 60 80 100 120 140 160
TC, Case Temperature(℃)
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5°C/W
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTEF1P15AN6
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTEF1P15AN6.PDF ] | |
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