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PDF TSM200N03D Data sheet ( Hoja de datos )

Número de pieza TSM200N03D
Descripción Dual N-Channel MOSFET
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! TSM200N03D Hoja de datos, Descripción, Manual

TSM200N03D
Taiwan Semiconductor
FEATURES
Fast switching
100% avalanche tested
Pb-free plating
RoHS compliant
Halogen-free package
APPLICATION
Power Supply
Motor COntrol
Dual N-Channel MOSFET
30V, 20A, 20mΩ
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = -10V
VGS = -4.5V
Qg
30
20
30
4.1
V
mΩ
nC
PDFN33 Dual
Notes: Moisture sensitivity level: level 3. Per J-STD-020
Dual N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
30
±20
20
13
80
20
14
17
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
6.4 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
Document Number:DS_P0000166
1
Version: A15

1 page




TSM200N03D pdf
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN33 Dual
TSM200N03D
Taiwan Semiconductor
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
` S =May T =Jun U =Jul V =Aug
W =Sep X =Oct Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number:DS_P0000166
5
Version: A15

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