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PDF SMG2334N Data sheet ( Hoja de datos )
| Número de pieza | SMG2334N | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
SMG2334N
3.5A, 30V, RDS(ON) 60m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on) and
to ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SC-59 saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
Drain
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
TA=25°C
TA=70°C
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t≦10 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
http://www.SeCoSGmbH.com/
16-Mar-2011 Rev. A
Gate
Source
Ratings
30
±12
3.5
2.8
16
1.25
1.3
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
W
°C
°C/W
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG2334N.PDF ] | |
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