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PDF DMN3110S Data sheet ( Hoja de datos )
| Número de pieza | DMN3110S | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Product Summary
V(BR)DSS
30V
RDS(ON) max
73mΩ @ VGS = 10V
110mΩ @ VGS = 4.5V
ID max
TA = +25°C
3.3A
2.7A
DMN3110S
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
Boost Application
Analog Switch
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.027 grams (approximate)
Ordering Information (Note 4)
Notes:
Part Number
DMN3110S-7
Case
SOT-23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
Code
Month
Code
Chengdu A/T Site
2007
U
Jan
1
2008
V
Feb
2
Shanghai A/T Site
MN7 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2009
W
Mar
3
2010
X
Apr
4
2011
Y
2012
Z
2013
A
May Jun
56
Jul Aug
78
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN3110S
Document number: DS31561 Rev. 3 - 2
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
1 page  
DMN3110S
1
0.1
0.01
0.001
0.00001
0.0001
RJA(t)=r(t) * RJA
RJA=54°C/W
Duty Cycle, D=t1/ t2
0.001
0.01
0.1
1
10 100 1000
t1, PULSE DURATION TIMES (sec)
Fig. 12 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A ll 7 °
H
K1 K
G AU G E PLANE
0.2 5
J
AM
L
a
L1
CB
D
FG
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
XE
Dimensions
Z
X
Y
C
E
Value (in mm)
2.9
0.8
0.9
2.0
1.35
DMN3110S
Document number: DS31561 Rev. 3 - 2
5 of 6
www.diodes.com
October 2013
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMN3110S.PDF ] | |
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