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PDF HD10 Data sheet ( Hoja de datos )

Número de pieza HD10
Descripción MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
Fabricantes KD 
Logotipo KD Logotipo



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No Preview Available ! HD10 Hoja de datos, Descripción, Manual

HD01 THRU HD10
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
Reverse Voltage - 100 to 1000 Volts Forward Current - 0.8 Ampere
FEATURES
Surge overload rating - 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
MECHANICAL DATA
Case : MBS, Molded Plastic
Epoxy : Device has UL flammability classification 94V-0
Mounting Position : Any
Weight : 0.22 grams (approx.)
Marking : Type Number
MBS
.067(1.7)
.057(1.3)
.051(1.3)
.035(0.9)
.275(7.0)MAX
.165(4.2)
.150(3.8)
.031(0.8)
.019(0.5) .106(2.7)
.09(2.3)
.014(.35)
.006(.15)
.193(4.9)
.177(4.5)
.106(2.7)
.09(2.3)
.008(0.2)
.043(1.1)
.027(0.7)
.067(1.7)
.057(1.3)
1
2
3
4
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Symbol HD01 HD02 HD04 HD06 HD08 HD10 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
VR
100 200 400 600 800 1000 V
VR(RMS) 70 140 280 420 560 700 V
Average Rectified Output Current (Note 1) @TA = 40°C
IO
0.8 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I2t Rating for Fusing (t < 8.3ms)
Forward Voltage per element
@IF = 0.8A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
Typical Junction Capacitance per leg (Note 2)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
IFSM
I2t
VFM
IRM
Cj
R JA
R JL
Tj, TSTG
Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
30
10
1.1
5.0
500
25
85
20
-55 to +150
A
A2s
V
µA
pF
°C/W
°C

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