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AP2606CMT Datasheet PDF - Advanced Power Electronics

Part Number AP2606CMT
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturers Advanced Power Electronics 
Logo Advanced Power Electronics Logo 

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AP2606CMT datasheet, circuit
Advanced Power
Electronics Corp.
AP2606CMT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
SO-8 Compatible with Heatsink
D
Ultra Low On-resistance
RoHS Compliant & Halogen-Free
G
Description
S
AP2606C series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
BVDSS
RDS(ON)
ID4
25V
0.8mΩ
280A
D
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=25
ID@TA=25
ID@TA=70
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V4
Drain Current, VGS @ 10V4(Package Limited)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
25
+20
280
100
60
50.5
650
104
5
45
-55 to 150
-55 to 150
V
V
A
A
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
1.2
25
Unit
/W
/W
1
201507091

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1 page
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AP2606CMT equivalent
AP2606CMT
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
4
T j =25 o C
3
120
100
80
60
40
20
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
2
4.5V
1
V GS =10V
0
0 20 40 60 80 100 120
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
.
5

5 Page
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Information Total 6 Pages
Download[ AP2606CMT.PDF Datasheet ]

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Part NumberDescriptionManufacturers
AP2606CMTThe function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET.Advanced Power Electronics
Advanced Power Electronics

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