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PDF BYG23M Data sheet ( Hoja de datos )

Número de pieza BYG23M
Descripción High Efficient Surface Mount Rectifiers
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! BYG23M Hoja de datos, Descripción, Manual

CREAT BY ART
High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated junction chip.
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 available
BYG23M
Taiwan Semiconductor
TYPICAL APPLICATION
The superior avalanche capability of BYG23M is specially
suited for free-wheeling, clamping, snubbering,
demagnetization in power supplies and other power switching applications.
DO-214AC (SMA)
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.064 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
BYG23M
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (@TA=65°C)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
Maximum instantaneous forward voltage (Note 1)
@1A
VF
Maximum reverse current @ rated VR
TJ=25°C
TJ=100°C
TJ=125°C
IR
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ) TA=25, I(BR)R =1.23A
ERSM
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
trr
CJ
RθJA
TJ
TSTG
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.
1000
700
1000
1.5
50
1.7
1
15
50
30
65
15
70
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
mJ
ns
pF
OC/W
OC
OC
Document Number: DS_D1411087
Version: B14

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