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PDF BAW101V Data sheet ( Hoja de datos )
| Número de pieza | BAW101V | |
| Descripción | HIGH VOLTAGE DUAL SWITCHING DIODE | |
| Fabricantes | Diodes | |
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Features
• Fast Switching Speed: Maximum of 50ns
• High Reverse Breakdown Voltage: 325V for Single Diode or
650V for Series Connection
• Two Electrically Isolated Elements in a Single Compact Package
• Low Leakage Current: Maximum of 50nA when VR = 5V or
Maximum of 150nA when VR = 250V at Room Temperature
• Thermally Efficient Copper Alloy leadframe for High Power
Dissipation
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
• "Green" Device (Note 4)
BAW101V
HIGH VOLTAGE DUAL SWITCHING DIODE
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
654
Top View
Bottom View
123
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Single Diode
Series Connection
Working Peak Reverse Voltage
Single Diode
DC Blocking Voltage
Series Connection
RMS Reverse Voltage
Forward Current (Note 2)
Single Diode Loaded
Double Diode Loaded
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
Repetitive Peak Forward Current @ t = 8.3ms (Note 2)
Symbol
VRRM
VRWM
VR
VR(RMS)
IF
IFSM
IFRM
Value
325
650
325
650
230
250
140
8.0
3.0
Unit
V
V
V
mA
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
500
250
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage
Reverse Current (Note 1)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IR
CT
trr
Min
300
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
1.1
50
150
50
2.0
50
Unit
V
V
nA
nA
μA
pF
ns
Test Condition
IR = 100μA
IF = 100mA
VR = 5V
VR = 250V
VR = 250V, TJ = 150°C
VR = 0, f = 1.0MHz
IF = IR = 30mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead. Halogen and Antimony Free.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
BAW101V
Document number: DS32178 Rev. 4 - 2
1 of 4
www.diodes.com
September 2010
© Diodes Incorporated
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