BAW101S Datasheet PDF - Diodes
Part Number | BAW101S | |
Description | HIGH VOLTAGE DUAL SWITCHING DIODE | |
Manufacturers | Diodes | |
Logo | ||
There is a preview and BAW101S download ( pdf file ) link at the bottom of this page. Total 4 Pages |
Preview 1 page No Preview Available ! Features
• Fast Switching Speed: max. 50ns
• High Reverse Breakdown Voltage: 300V
• Two Electrically Isolated Elements in a Single Compact Package
• Low Leakage Current: 150nA at Room Temperature
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
• "Green" Device (Note 4)
BAW101S
HIGH VOLTAGE DUAL SWITCHING DIODE
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
654
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Single Diode
Series Connection
Working Peak Reverse Voltage
DC Blocking Voltage
Single Diode
Series Connection
RMS Reverse Voltage
Forward Current (Note 2)
Single Diode Loaded
Double Diode Loaded
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
Repetitive Peak Forward Current @ t = 8.3ms (Note 2)
123
Device Schematic
Symbol
VRRM
VRWM
VR
VR(RMS)
IF
IFSM
IFRM
Value
300
600
300
600
212
250
140
4.5
625
Unit
V
V
V
mA
A
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage
Reverse Current (Note 1)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IR
CT
trr
Min
300
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
1.1
50
150
75
2.0
50
Unit
V
V
nA
nA
μA
pF
ns
Test Condition
IR = 100μA
IF = 100mA
VR = 5V
VR = 250V
VR = 250V, TJ = 150°C
VR = 0, f = 1.0MHz
IF = IR = 30mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead. Halogen and Antimony Free.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
BAW101S
Document number: DS32177 Rev. 4 - 2
1 of 4
www.diodes.com
July 2010
© Diodes Incorporated
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BAW101S electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ BAW101S.PDF Datasheet ] |
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