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What is CS4N60FA9HD?

This electronic component, produced by the manufacturer "Huajing Discrete Devices", performs the same function as "Silicon N-Channel Power MOSFET".


CS4N60FA9HD Datasheet PDF - Huajing Discrete Devices

Part Number CS4N60FA9HD
Description Silicon N-Channel Power MOSFET
Manufacturers Huajing Discrete Devices 
Logo Huajing Discrete Devices Logo 


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Huajing Discrete Devices
R
Silicon N-Channel Power MOSFET
CS4N60F A9HD
General Description
CS4N60F A9HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 14.5nC)
l Low Reverse transfer capacitances(Typical: 8.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
600
4
30
1.8
Rating
600
4
3.2
16
±30
200
30
2.5
5.0
30
0.24
3000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012

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CS4N60FA9HD equivalent
Huajing Discrete Devices
R CS4N60F A9HD
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 TC
125
10
1
1.00E-05
1.00E-04
9
PULSE DURATION = 10μs
7.5 DUTY CYCLE = 0.5%MAX
VDS=30V
1.00E-03
1.00E-02
t Pulse Width , Seconds
1.00E-01
Figure 6 Maximun Peak Current Capability
6
5
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
6
4.5
3 -55
+25
1.5
+150
4
ID= 4A
3 ID= 2A
ID= 1A
2
1
0
2345
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
3
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
2.5
0
6 4 6 8 10 12 14
Vgs , Gate to Source VoltageVolts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2A
1.75
2
VGS=20V
1.5
1.25
1.5 1
0.75
1
0123
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
4
0.5
-50
Figure
0 50 100 150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2012


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Featured Datasheets

Part NumberDescriptionMFRS
CS4N60FA9HDThe function is Silicon N-Channel Power MOSFET. Huajing Discrete DevicesHuajing Discrete Devices

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