|
|
PDF VND5E008AY-E Data sheet ( Hoja de datos )
| Número de pieza | VND5E008AY-E | |
| Descripción | Double channel high-side driver | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de VND5E008AY-E (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
VND5E008AY-E
Double channel high-side driver with analog current sense
for automotive applications
Datasheet - production data
PowerSSO-36
Features
• Protection:
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss
of VCC
– Thermal shut down
– Reverse battery protection with self switch
of the Power MOS
Max transient supply voltage
Operating voltage range
Typ on-state resistance (per ch.)
Current limitation (typ)
Off-state supply current
VCC 41 V
VCC 4.5 to 28V
RON 8 mΩ
ILIMH
IS
76 A
2 μA(1)
1. Typical value with all loads connected.
• General:
– Inrush current active management by
power limitation
– Very low standby current
– 3.0V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– Compliant with European directive
2002/95/EC
– Proportional load current sense
– High current sense precision for wide range
current
– Very low current sense leakage
• Diagnostic functions:
– Off-state open-load detection
– Current sense disable
– Thermal shutdown indication
– Output short to VCC detection
– Overload and short to ground (power
limitation) indication
Applications
• All types of resistive, inductive and capacitive
loads
Description
The VND5E008AY-E is a device made using
STMicroelectronics® VIPower® MO-5 technology.
It is intended for driving resistive or inductive
loads with one side connected to ground. Active
VCC pin voltage clamp protects the device against
low energy spikes.
This device integrates an analog current sense
which delivers a current proportional to the load
current when CS_DIS high leads the current
sense pin in high impedance.
Fault conditions such as overload,
overtemperature or open-load are reported via
the current sense pin
Output current limitation protects the device in
overload condition. In case of long overload
duration, the device limits the dissipated power to
safe level up to thermal shutdown intervention.
Thermal shutdown with automatic restart allows
the device to recover normal operation as soon as
fault condition disappears.
October 2013
This is information on a product in full production.
DocID13620 Rev 5
1/39
www.st.com
1 page  
VND5E008AY-E
Block diagram and pin description
1 Block diagram and pin description
6LJQDO&ODPS
8QGHUYROWDJH
,1
,1
Figure 1. Block diagram
&RQWURO 'LDJQRVWLF
&RQWURO 'LDJQRVWLF
3RZHU
&ODPS
'5,9(5
2YHU
WHPS
&XUUHQW
/LPLWDWLRQ
921
/LPLWDWLRQ
5HYHUVH
%DWWHU\
3URWHFWLRQ
9&&
&+
&6B
',6
96(16(+
&6
&6
/2*,&
)DXOW
&XUUHQW
6HQVH
29(5/2$'3527(&7,21
$&7,9(32:(5/,0,7$7,21
*1'
&+
287
287
*$3*&)7
Name
VCC
OUT1,2
GND
IN1,2
CS1,2
CS_DIS
Table 1. Pin function
Function
Battery connection
Power output
Ground connection
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state
Analog current sense pin, delivers a current proportional to the load current
Active high CMOS compatible pin, to disable the current sense pin
DocID13620 Rev 5
5/39
38
5 Page 
VND5E008AY-E
Electrical specifications
Symbol
Table 7. Current sense (8 V < VCC < 18 V) (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
Delay Response time
tDSENSE1L from rising edge of
CS_DIS pin
Delay Response time
tDSENSE2H from rising edge of
INPUT pin
Delay response time
ΔtDSENSE2H
between rising edge of
output current and rising
edge of current sense
Delay Response time
tDSENSE2L from falling edge of
INPUT pin
VSENSE < 4 V, 1.5 A < IOUT < 25 A
ISENSE = 10 % of ISENSE max
(see Figure 4)
VSENSE < 4 V, 1.5 A < IOUT < 25 A
ISENSE = 90 % of ISENSE max
(see Figure 4)
VSENSE < 4 V,
ISENSE = 90 % of ISENSEMAX,
IOUT = 90 % of IOUTMAX
IOUTMAX = 5 A (see Figure 11)
VSENSE < 4 V, 1.5 A < IOUT < 25 A
ISENSE = 10 % of ISENSE max
(see Figure 4)
5 20 µs
70 300 µs
300 µs
100 250 µs
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open load OFF-state detection.
Symbol
Table 8. Open-load detection (8 V < VCC < 18 V)
Parameter
Test conditions
Min Typ Max Unit
VOL
Open-load off-state voltage
detection threshold
tDSTKON
Output short circuit to VCC
detection delay at turn-off
IL(off2)r
Off-state output current at
VOUT = 4 V
IL(off2)f
Off-state output current at
VOUT = 2 V
VIN = 0 V
2—
See Figure 5
180 —
VIN = 0V; VSENSE = 0 V;
VOUT rising from 0 V to 4 V
-120
VIN = 0V;
VSENSE = VSENSEH;
VOUT falling from VCC to 2 V
-50
—
—
4
1200
90
90
V
µs
µA
µA
Symbol
Parameter
Table 9. Protections (1)
Test conditions
IlimH
IlimL
TTSD
DC short circuit
current
VCC = 13 V
5 V < VCC < 18 V
Short circuit current
during thermal cycling
VCC = 13 V; TR < Tj < TTSD
Shutdown
temperature
TR Reset temperature
TRS
Thermal reset of
STATUS
Min.
53
Typ. Max. Unit
76 106 A
106 A
21 A
150 175 200 °C
TRS +1
TRS
+5
°C
135 °C
DocID13620 Rev 5
11/39
38
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet VND5E008AY-E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| VND5E008AY-E | Double channel high-side driver | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |