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PDF VND5E004C30 Data sheet ( Hoja de datos )
| Número de pieza | VND5E004C30 | |
| Descripción | high-side driver | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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VND5E004C30
Double 4mΩ high-side driver with analog CurrentSense for
automotive applications
Datasheet - production data
Features
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Max transient supply voltage
VCC 41 V
Operating voltage range
VCC 4.5 to 28 V
Max on-state resistance (per ch.) RON 4 mΩ
Current limitation (typ)
Off-state supply current
ILIMH
IS
90 A
2 µA(1)
1. Typical value with all loads connected
– Protection against loss of ground and loss
of VCC
– Overtemperature shutdown with auto
restart (thermal shutdown)
– Inrush current active management by
power limitation
– Reverse battery protection with self switch
on of the Power MOSFET
– Electrostatic discharge protection
Applications
• All types of resistive, inductive and capacitive
loads
• Suitable for power management applications
• Automotive qualified
• General
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emissions
– Very low electromagnetic susceptibility
– Compliant with European directive
2002/95/EC
– Very low current sense leakage
• Diagnostic functions
– Proportional load current sense
– High current sense precision for wide
currents range
– Diagnostic enable pin
– Off-state open-load detection
– Output short to VCC detection
– Overload and short to ground (power
limitation) indication
– Thermal shutdown indication
• Protection
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
Description
The device is a double channel high-side driver
manufactured using ST proprietary VIPower®
M0-5 technology and housed in a
MultiPowerSO-30 package. The device is
designed to drive 12 V automotive grounded
loads, and to provide protection and diagnostics.
It also implements a 3 V and 5 V CMOS-
compatible interface for use with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with auto-
restart and overvoltage active clamp. A dedicated
analog current sense pin is associated with every
output channel providing enhanced diagnostic
functions including fast detection of overload and
short-circuit to ground through power limitation
indication, overtemperature indication, short-
circuit to VCC diagnosis and on-state and off-state
open-load detection. The current sensing and
diagnostic feedback of the whole device can be
disabled by pulling the DE pin low to share the
external sense resistor with similar devices.
November 2015
This is information on a product in full production.
DocID027937 Rev 2
1/35
www.st.com
1 page  
VND5E004C30
Block diagram and pin configurations
1 Block diagram and pin configurations
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OUT1,2
GND
IN1,2
CS1,2
DE
Figure 1. Block diagram
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Table 1. Pin functions
Function
Battery connection
Power output
Ground connection
Voltage controlled input pin with hysteresis, CMOS compatible, controls
output switch state
Analog current sense pin; delivers a current proportional to the load current
Active high diagnostic enable pin
DocID027937 Rev 2
5/35
34
5 Page 
VND5E004C30
Electrical specifications
Symbol
Table 9. Current sense (8 V < VCC < 18 V) (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
ISENSE0
IOL
IOUT = 0 A; VSENSE = 0 V; VDE = 0 V;
VIN = 0 V; Tj = -40 °C to 150 °C
Analog sense
leakage current
IOUT = 0 A; VSENSE = 0 V; VDE = 5 V;
VIN = 5 V; Tj = -40 °C to 150 °C
IOUT = 15 A; VSENSE = 0 V;
VDE = 0 V; VIN = 5 V;
Open-load on-
state current
detection threshold
VIN = 5 V; 8 V < VCC < 18 V
ISENSE = 5 µA
0
0
0
10
VSENSE
Max analog sense IOUT = 45 A; VCSD = 0 V;
output voltage
RSENSE = 3.9 kΩ
Analog sense
VSENSEH output voltage in
fault condition(2)
VCC =13 V; RSENSE = 3.9 kΩ
5
8
Analog sense
ISENSEH output current in
fault condition(2)
VCC =13 V; VSENSE = 5 V
9
Delay response
tDSENSE1H time from rising
edge of DE pin
VSENSE < 4 V; 5 A < IOUT < 30 A;
ISENSE = 90 % of ISENSE max
(see Figure 4)
50
Delay response
tDSENSE1L time from falling
edge of DE pin
VSENSE < 4 V; 5 A < IOUT < 30 A;
ISENSE = 10 % of ISENSE max
(see Figure 4)
5
Delay response VSENSE < 4 V; 5 A < IOUT < 30 A;
tDSENSE2H time from rising
ISENSE = 90 % of ISENSE max
edge of INPUT pin VDE = 5 V (see Figure 4)
200
Delay response VSENSE < 4 V; 5 A < Iout < 30 A;
tDSENSE2L time from falling ISENSE = 10 % of ISENSE max
edge of INPUT pin VDE = 5 V (see Figure 4)
100
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
1 µA
2 µA
1 µA
150 mA
V
V
mA
100 µs
20 µs
600 µs
250 µs
Symbol
Table 10. Open-load detection (8 V < VCC < 18 V; VDE = 5 V)
Parameter
Test conditions
Min. Typ. Max. Unit
VOL
Open-load off-state voltage
detection threshold
tDSTKON
Output short circuit to VCC
detection delay at turn off
IL(off2)r
Off-state output current at
VOUT = 4 V
VIN = 0 V, VDE = 5 V;
See Figure 5
VDE = 5 V; See Figure 5
VIN = 0 V; VSENSE = 0 V;
VDE = 5 V;
VOUT rising from 0 V to 4 V
2 — 4V
180 — 1200 µs
-120 — 90 µA
DocID027937 Rev 2
11/35
34
11 Page | ||
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