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VNLD5160-E PDF Datasheet - fully protected low-side driver - STMicroelectronics

Part Number VNLD5160-E
Description fully protected low-side driver
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 
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VNLD5160-E datasheet, circuit
VNLD5160-E
OMNIFET III fully protected low-side driver
Datasheet - production data
SO-8
Features
Type
VNLD5160-E
Vclamp
41 V
RDS(on)
160 mΩ
ID
3.5 A
Automotive qualified
Drain current: 3.5 A
ESD protection
Overvoltage clamp
Thermal shutdown
Current and power limitation
Very low standby current
Very low electromagnetic susceptibility
Compliant with European directive 2002/95/EC
Open drain status output
Specially intended for R10W or 2xR5W
automotive signal lamps
Description
The VNLD5160-E is a monolithic device made
using STMicroelectronics® VIPower® technology,
intended for driving resistive or inductive loads
with one side connected to the battery. Built-in
thermal shutdown protects the chip from
overtemperature and short-circuit. Output current
limitation protects the device in an overload
condition. In case of long duration overload, the
device limits the dissipated power to a safe level
up to thermal shutdown intervention.Thermal
shutdown, with automatic restart, allows the
device to recover normal operation as soon as a
fault condition disappears. Fast demagnetization
of inductive loads is achieved at turn-off.
Package
SO-8
Table 1. Devices summary
Order codes
Tube
VNLD5160-E
Tape and reel
VNLD5160TR-E
September 2015
This is information on a product in full production.
DocID027681 Rev 2
1/20
www.st.com

1 page

VNLD5160-E pdf, schematic
Contents
Contents
VNLD5160-E
1 Block diagrams and pins configurations . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1 MCU I/O protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4 Package and PC board thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.1 SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.1 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.2 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20 DocID027681 Rev 2

2 Page

VNLD5160-E equivalent
VNLD5160-E
Block diagrams and pins configurations
1 Block diagrams and pins configurations
Figure 1. Block diagram
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Table 2. Pin function
Function
IN1,2/VSUPPLY1,2
Voltage controlled input pin with hysteresis, CMOS compatible. They control
output switch state.
DRAIN1,2
SOURCE1,2
STATUS1,2
PowerMOS drain.
PowerMOS source and ground reference for the control section.
Open drain digital diagnostic pin.
DocID027681 Rev 2
5/20
19

5 Page

VNLD5160-E diode, scr
VNLD5160-E
Electrical specifications
Table 10. Switching characteristics
Symbol
Parameter
Test conditions
Min.
td(ON)
td(OFF)
tr
tf
WON
Turn-on delay time
Turn-off delay time
Rise time
Fall time
Switching energy
losses at turn-on
RL = 13 Ω; VCC = 13 V(1)
RL = 13 Ω; VCC = 13 V(1)
RL = 13 Ω; VCC = 13 V(1)
RL = 13 Ω; VCC = 13 V(1)
RL = 13 Ω; VCC = 13 V
WOFF
Switching energy
losses at turn-off
RL = 13 Ω; VCC = 13 V
1. See Figure 4: Switching characteristics.
Typ.
8.9
13.2
14.1
11.5
34.3
34.3
Max.
Unit
µs
µs
µs
µs
— mJ
— mJ
Table 11. Protection and diagnostics
Symbol
Parameter
Test conditions
Min. Typ. Max.
IlimH
IlimL
tdlimL
DC short-circuit current
Short-circuit current
during thermal cycling
Step response current
limit
VDS = 13 V;
Vsupply = VIN = 5 V
VDS = 13 V; TR < Tj < TTSD;
Vsupply = VIN = 5 V
VDS = 13 V; Vinput = 5 V
TTSD
TR
TRS
Shutdown temperature
Reset temperature
Thermal reset of
STATUS
THYST
Thermal hysteresis
(TTSD - TR)
3.5 5
2.5
20
150 175
TRS + 1 TRS + 5
135
7
7.5
200
Unit
A
A
µs
°C
°C
°C
°C
DocID027681 Rev 2
9/20
19

9 Page





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