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PDF UGB8DT Data sheet ( Hoja de datos )
| Número de pieza | UGB8DT | |
| Descripción | ULTRAFAST EFFICIENT PLASTIC RECTIFIER | |
| Fabricantes | General Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de UGB8DT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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UGB8AT THRU UGB8DT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes
0.320 (8.13)
0.360 (9.14)
SEATING -T-
PLATE
0.095 (2.41)
0.100 (2.54)
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
1K2
0.575 (14.60)
0.625 (15.88)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.027 (0.686)
0.037 (0.940)
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
PIN 1
PIN 2
K - HEATSINK
Dimensions in inches and (millimeters)
FEATURES
♦ Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
♦ Ideally suited for use in very high frequency
switching power supplies, inverters and as a free
wheeling diode
♦ Ultrafast reverse
recovery time for high efficiency
♦ Soft recovery characteristics
♦ Excellent high temperature switching
♦ Glass passivated chip junction
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC=100°C
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method) at TC=100°C
Maximum instantaneous forward voltage at: 8.0
20A
5.0A, TJ=150°C
Maximum DC reverse current
at rated DC blocking voltage
TC=25°C
TC=100°C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
(NOTE 2)
TJ=25°C
TJ=100°C
Maximum recovered stored charge
(NOTE 2)
TJ=25°C
TJ=100°C
Typical junction capacitance (NOTE 3)
Typical thermal resistance (NOTE 4)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
trr
Qrr
CJ
RΘJC
TJ, TSTG
UGB8AT
50
35
50
UGB8BT
100
70
100
UGB8CT
150
105
150
8.0
150.0
1.00
1.20
0.95
10.0
300.0
20.0
30.0
50.0
20.0
45.0
45.0
4.0
-55 to+150
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Trr and Qrr measured at IF=8.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM for meaurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case
UGB8DT
200
140
200
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µA
ns
ns
nC
pF
°C/W
°C
10/27/98
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet UGB8DT.PDF ] | |
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