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PDF SFF25P20 Data sheet ( Hoja de datos )
| Número de pieza | SFF25P20 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | SSDI | |
| Logotipo |  |
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number/Ordering Information 1/
SFF25P20 ___ ___
│ └ Screening 2/
│ __ = Not Screened
│ TX = TX Level
│ TXV = TXV
│
└
S = S Level
Package 2/
S2I = SMD2 Isolated
M = TO-254
Maximum Ratings
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
SFF25P20 Series
25 AMP / 200 Volts
150 mΩ typical
P-Channel MOSFET
Features:
• polySi gate cell structure
• Low ON-resistance
• UIS (unclamped inductive switching) rated
• Hermetically Sealed, Isolated Package
• Low package inductance
• Stress relief provided by flexible leads –
several options available
• Improved (RDS(ON) QG) figure of merit
• TX, TXV, S-Level screening available
Continuous
transient
@ TC = 25ºC
@ TC = 25ºC
@ TC = 25ºC
Junction to Case
Symbol
VDSS
VGS
ID1
ID3
IAR
EAR
PD
TOP & TSTG
R0JC
Value
-200
±20
±30
25
95
25
30
250
-55 to +150
0.83
0.6 typical
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTES:
1/ For ordering information, price, operating curves, and
availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ Unless otherwise specified, all electrical characteristics
@25ºC.
SMD 2 Isolated
TO-254
NOTE: SEE DASH# DEFINITION TABLE
FOR AVAILABLE LEAD FORMING
CONFIGURATION
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0009B
DOC
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SFF25P20.PDF ] | |
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