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PDF SX1710 Data sheet ( Hoja de datos )
| Número de pieza | SX1710 | |
| Descripción | Broadband High Efficiency RF Power Amplifier | |
| Fabricantes | Semtech | |
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WIRELESS SENSING & TIMING
Broadband High Efficiency RF Power Amplifier
100 MHz to 1 GHz
SX1710
DATASHEET
GENERAL DESCRIPTION
The SX1710 is a high-gain / highly efficient power amplifier
offering high performances and broad band operation. This
power amplifier is intended to be used with constant
envelop signal in VHF and UHF frequency bands. This is
the ideal part for RFID and other FM, FSK, ASK
applications in a frequency range from 100 MHz to 1 GHz.
The chip is fabricated on a silicon process. The chip is
assembled in a low thermal resistance 5x5 mm2 QFN28
package.
KEY PRODUCT FEATURES
Wide operation frequency range from 100MHz to
1 GHz.
High power gain up to 35dB.
High output power up to 34.5dBm (2.8W).
High power added efficiency up to 55%.
5x5 mm2 plastic QFN28 with 0.5mm pitch.
APPLICATIONS
Wireless data communication (FSK, ASK / OOK, GFSK,
MSK).
RFID reader/writers.
Automatic meter reading (AMR).
Wireless sensor network and Ad Hoc application.
Remote control and sensing systems.
Commercial and consumer electronics.
ORDERING INFORMATION
Part Number
Temperature
Range
Package
MOQ
SX1710IMLTRT
-40 °C to
+85 °C
Lead Free 3000 pieces
QFN-28 on reels
RoHS/WEEE compliant product
Rev. 2.0 / November 25, 2014
©2014 Semtech Corporation
Page 1
www.semtech.com
1 page  
WIRELESS SENSING & TIMING
SX1710
DATASHEET
2. Electrical Characteristics
2.1. ESD Notice
The SX1710 is an RF Power Amplifier device which satisfies the ff:
Class 1A of the JEDEC standard JESD22-A114 (Human Body Model) on all pins
Class I of the JEDEC standard JESD22-C101 (Charge Device Model) on all pins
CAUTION: ESD sensitive device!
It should thus be handled with all the necessary ESD precautions to avoid any permanent damage!
2.2. Absolute Maximum Ratings
Stresses above the values listed below may cause permanent device failure. Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 2 Absolute Maximum Ratings
Symbol
Vdsmr
Idsmr
Vgsmr
Ovswrmr
Irfmr
Tsoldmr
Tmr
Description
Drain to source voltage (transient)
Total supply current
Gate to source voltage
Output load VSWR
Input level
Soldering temperature (lead)
Storage temperature
Min.
Max.
Unit
-0.5 5.0
V
- 2.2 A
-0.5 2.0
V
- 10:1 -
- 15 dBm
- 260 °C
-40 125
°C
2.3. Operating Range
Conditions: VDD must be powered up before or in parallel with VGG (Vbias)
Table 3 Operating Range
Symbol
VDD
VGG (Vbias)
VGS
Tja
Trop
Description
Supply Voltage
Bias Main Supply
Bias Control Voltage per stage
Thermal Resistance: junction-to-ambient
Temperature
Min.
2.5
2.5
0.7
30.21
-40
Rev. 2.0 / November 25, 2014
©2014 Semtech Corporation
Page 5
Max.
5.0
4.0
1.7
-
85
Unit
V
V
V
°C/W
°C
www.semtech.com
5 Page 
WIRELESS SENSING & TIMING
5. Revision History
Table 5 Revision History
Revision
1
2
Date
May 2013
November 2014
Comment
Preliminary Datasheet
Specification and Application board changes
SX1710
DATASHEET
Rev. 2.0 / November 25, 2014
©2014 Semtech Corporation
Page 11
www.semtech.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SX1710.PDF ] | |
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