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1N5822 Datasheet PDF - MotorolaInc

Part Number 1N5822
Description SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20/ 30/ 40 VOLTS
Manufacturers MotorolaInc 
Logo MotorolaInc Logo 



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1N5822 datasheet, circuit
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 1N5820/D
Designer's Data Sheet
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
1N5820
1N5821
1N5822
1N5820 and 1N5822 are
Motorola Preferred Devices
Extremely Low vF
Low Power Loss/High Efficiency
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16from case
Shipped in plastic bags, 5,000 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
Polarity: Cathode indicated by Polarity Band
Marking: 1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
CASE 267–03
PLASTIC
Rating
Symbol 1N5820 1N5821 1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non–Repetitive Peak Reverse Voltage
RMS Reverse Voltage
vAverage Rectified Forward Current (2)
VR(equiv) 0.2 VR(dc), TL = 95°C
(RθJA = 28°C/W, P.C. Board Mounting, see Note 2)
Ambient Temperature
Rated VR(dc), PF(AV) = 0
RθJA = 28°C/W
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
VRRM
20
30
40
VRWM
VR
VRSM
24
36
48
VR(RMS)
14
21
28
IO 3.0
TA 90 85 80
IFSM
TJ, Tstg
80 (for one cycle)
*65 to +125
V
V
V
A
°C
A
°C
Peak Operating Junction Temperature (Forward Current applied)
TJ(pk)
150
°C
*THERMAL CHARACTERISTICS (Note 2)
Characteristic
Thermal Resistance, Junction to Ambient
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32from case.
* Indicates JEDEC Registered Data for 1N5820–22.
Symbol
RθJA
Max
28
Unit
°C/W
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 2
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1

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1N5822 equivalent
50
30
20
TJ = 100°C
10
7.0
5.0
3.0 25°C
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 7. Typical Forward Voltage
500
1N5820
300
200
TJ = 25°C
f = 1.0 MHz
1N5821
100
70 1N5822
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
VR, REVERSE VOLTAGE (VOLTS)
20 30
Figure 10. Typical Capacitance
100
70
50
TL = 75°C
f = 60 Hz
30
1N5820 1N5821 1N5822
20 1 CYCLE
10
1.0
SURGE APPLIED AT RATED LOAD CONDITIONS
2.0 3.0
5.0 7.0 10
20 30
NUMBER OF CYCLES
50 70 100
Figure 8. Maximum Non–Repetitive Surge
Current
100
50 TJ = 125°C
20
10
100°C
5.0
2.0 75°C
1.0
0.5
0.2
0.1 25°C
0.05
0.02
0.01
0
1N5820
1N5821
1N5822
4.0 8.0 12 16 20 24 28 32
VR, REVERSE VOLTAGE (VOLTS)
36
Figure 9. Typical Reverse Current
40
NOTE 4 — HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and
stored charge. Satisfactory circuit analysis work may be performed
by using a model consisting of an ideal diode in parallel with a
variable capacitance. (See Figure 11.)
Rectifier Device Data
5

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Information Total 6 Pages
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