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2SK3211L Datasheet PDF - Renesas

Part Number 2SK3211L
Description Silicon N Channel MOS FET
Manufacturers Renesas 
Logo Renesas Logo 



Preview ( 9 pages )
		
2SK3211L datasheet, circuit
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 60 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
REJ03G1091-0400
Rev.4.00
May 15, 2006
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
4
G
12
3
123
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.4.00 May 15, 2006 page 1 of 8

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1 page
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2SK3211L equivalent
2SK3211(L), 2SK3211(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
10 V
8
5V
4
VGS = 0, –5 V
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
IAP = 25 A
40 VDD = 50 V
duty < 0.1 %
Rg > 50
30
20
10
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γ s (t) θ ch – c
θch – c = 1.25°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
L
IAP
Monitor
D. U. T
VDD
50
Avalanche Waveform
EAR =
1
2
L IAP2
VDSS
VDSS – VDD
IAP
ID
VV(BR)DSS
VDS
VDD
0
Rev.4.00 May 15, 2006 page 5 of 8

5 Page
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Information Total 9 Pages
Download[ 2SK3211L.PDF Datasheet ]

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