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2SC4097 Datasheet PDF - WEJ

Part Number 2SC4097
Description NPN EPITAXIAL SILICON TRANSISTOR
Manufacturers WEJ 
Logo WEJ Logo 

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RoHS
2SC4097
2SC4097 TRANSISTOR(NPN)
DFEATURES
Power dissipation
TPCM:
200 mW (Tamb=25)
.,LCollector current
ICM: 500
Collector-base voltage
mA
OV(BR)CBO:
40 V
Operating and storage junction temperature range
CTJ, Tstg: -55to +150
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
ICELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
NCollector-base breakdown voltage
OCollector-emitter breakdown voltage
Emitter-base breakdown voltage
RCollector cut-off current
TEmitter cut-off current
CDC current gain
ECollector-emitter saturation voltage
Transition frequency
LCollector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
VCE=3V, IC=10mA
IC=100mA, IB=10mA
VCE=5V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40 V
32 V
5V
1 µA
1 µA
82 390
0.4 V
250 MHz
6 pF
ECLASSIFICATION OF hFE(1)
JRank
ERange
WMarking
P
82-180
CP
Q
120-270
CQ
R
180-390
CR
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com



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