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2SC3739 Datasheet PDF - WEJ

Part Number 2SC3739
Description NPN EPITAXIAL SILICON TRANSISTOR
Manufacturers WEJ 
Logo WEJ Logo 

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RoHS
2SC3739
2SC3739 TRANSISTOR (NPN)
FEATURES
Power dissipation
DPCM:
0.2 W (Tamb=25)
TCollector current
.,LICM: 0.5
Collector-base voltage
A
V(BR)CBO:
60 V
Operating and storage junction temperature range
OTJ,Tstg: -55to +150
SOT-23-3L
1. EMITTER
2. BASE
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
CELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
ICParameter
Collector-base breakdown voltage
NCollector-emitter breakdown voltage
Emitter-base breakdown voltage
OCollector cut-off current
REmitter cut-off current
TDC current gain
CDC current gain
Collector-emitter saturation voltage
EBase-emitter voltage
LTransition frequency
EOuput Capacitance
Turn-on Time
JStorage Time
WETurn-on Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
Toff
Test conditions
Ic=100µA, IE=0
Ic= 1mA, IB=0
IE= 100µA, IC=0
VCB=40 V , IE=0
VEB= 4.0V , IC=0
VCE= 1.0V, IC= 150mA
VCE=2.0V, IC=500mA
IC=500 mA, IB= 50mA
IC=500mA, VCE=50V
VCE=10V, IC= 20mA
VCB=10V,IE=20mA
VCC=30V
IC=150mA
IB1=-IB2=15mA
MIN
60
40
5.0
75
20
200
TYP
150
75
0.25
1.0
400
3.5
MAX
0.1
0.1
300
UNIT
V
V
V
µA
µA
0.75 V
1.2 V
MHz
8.0 pF
35 ns
225 ns
275 ns
CLASSIFICATION OF hFE(1)
Marking
B12
B13
B14
Range
75-150
100-200
150-300
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com



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