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PDF DMN2990UFZ Data sheet ( Hoja de datos )
| Número de pieza | DMN2990UFZ | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMN2990UFZ
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(ON) max
0.99Ω @ VGS = 4.5V
1.2Ω @ VGS = 2.5V
1.8Ω @ VGS = 1.8V
2.4Ω @ VGS = 1.5V
ID max
TA = +25°C
250mA
230mA
180mA
150mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• General Purpose Interfacing Switch
• Power Management Functions
• Analog Switch
Features and Benefits
• Low Package Profile, 0.42mm Maximum Package Height
• 0.62mm x 0.62mm Package Footprint
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.0V Max
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: X2-DFN0606-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper Leadframe
Solderable per MIL-STD-202, Method 208 e4
• Weight: 0.001 grams (Approximate)
X2-DFN0606-3
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Package Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMN2990UFZ-7B
Case
X2-DFN0606-3
Packaging
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
X2-DFN0606-3
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
6N = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
1 of 7
www.diodes.com
January 2015
© Diodes Incorporated
1 page  
1
0.9
0.8
0.7
TA = 150°C
0.6
0.5 TA = 125°C
TA = 85°C
0.4
TA = 25°C
0.3
TA = -55°C
0.2
0.1
00 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
8
VDS = 10V
ID = 250mA
6
4
2
0
0 0.2 0.4 0.6 0.8
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN2990UFZ
100
Ciss
10
Coss
Crss
f = 1MHz
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
5 of 7
www.diodes.com
January 2015
© Diodes Incorporated
5 Page | ||
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