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What is DMN2027USS?

This electronic component, produced by the manufacturer "Diodes", performs the same function as "N-CHANNEL ENHANCEMENT MODE MOSFET".


DMN2027USS Datasheet PDF - Diodes

Part Number DMN2027USS
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturers Diodes 
Logo Diodes Logo 


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DMN2027USS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(ON) max
12.5m@ VGS= 4.5V
19m@ VGS= 2.5V
ID max
TA = +25°C
10.5 A
8.5 A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (Approximate)
SO-8
S
D
D
Pin1 S D
S DG
Top View
GD
Top View
Pin Configuration
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2027USS-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
85
NN32001267LUSS
YY WW
14
= Manufacturer’s Marking
N2027US = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 15 = 2015)
WW = Week (01 - 53)
DMN2027USS
Document number: DS35038 Rev. 4 - 2
1 of 7
www.diodes.com
February 2015
© Diodes Incorporated

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DMN2027USS equivalent
10,000
1,000
100
Ciss
Coss
Crss
f = 1MHz
10
0
10
5 10 15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
20
8
VDS = 15V
ID = 9.4A
6
4
2
0
0 5 10 15 20 25 30
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
10,000
1,000
100
10
DMN2027USS
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1
0 5 10 15 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
DMN2027USS
Document number: DS35038 Rev. 4 - 2
5 of 7
www.diodes.com
February 2015
© Diodes Incorporated


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Featured Datasheets

Part NumberDescriptionMFRS
DMN2027USSThe function is N-CHANNEL ENHANCEMENT MODE MOSFET. DiodesDiodes

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