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What is HU60N03?

This electronic component, produced by the manufacturer "HAOLIN", performs the same function as "30V N-Channel MOSFET".


HU60N03 Datasheet PDF - HAOLIN

Part Number HU60N03
Description 30V N-Channel MOSFET
Manufacturers HAOLIN 
Logo HAOLIN Logo 


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Total 9 Pages



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No Preview Available ! HU60N03 datasheet, circuit

Nov 2009
HD60N03 / HU60N03
30V N-Channel MOSFET
BVDSS = 30 V
RDS(on) = 9mΩ
ID = 60 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 18.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 9mΩ (Typ.) @V GS=10V
100% Avalanche Tested
TO-252 TO-251
HD60N03
HU60N03
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Continuous (TC = 25)
Continuous (TC = 100)
Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
30
60
36.6
220
±20
230
60
11
7.0
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.0
100
0.7
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient*
RθJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.0
40
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Units
/W

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HU60N03 equivalent
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
5V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
VDS
90%
5V
DUT
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
Rev. A1. May 2001


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HU60N03 electronic component.


Information Total 9 Pages
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Download [ HU60N03.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
HU60N03The function is 30V N-Channel MOSFET. HAOLINHAOLIN

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