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Número de pieza | RU6099S | |
Descripción | N-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU6099S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Features
• 60V/120A,
RDS (ON) =6m(Typ.) @VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Available
Applications
• Switching Application Systems
• Inverter Systems
RU6099S
N-Channel Advanced Power MOSFET
Pin Description
D
G
S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
60
±25
175
-55 to 175
120
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
380 A
120
A
90
150
W
75
1 °C/W
62.5 °C/W
625 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2013
1
www.ruichips.com
1 page RU6099S
Typical Characteristics
Output Characteristics
100
Vgs=8,9,10
80 V 6V
60
5V
40
20
3V
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
IDS=40A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=6mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Capacitance
4000
3500
Frequency=1.0MHz
3000
2500
Ciss
2000
1500
1000
500
Crss
0
1
Coss
10
VDS - Drain-Source Voltage (V)
100
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2013
5
Drain-Source On Resistance
20
15
10
10V
5
0
0
100
20 40 60 80
ID - Drain Current (A)
100
Source-Drain Diode Forward
10 TJ=175°C
1 TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=30V
IDS=40A
8
Gate Charge
7
6
5
4
3
2
1
0
0
20 40 60
QG - Gate Charge (nC)
80
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU6099S.PDF ] |
Número de pieza | Descripción | Fabricantes |
RU6099 | N-Channel Advanced Power MOSFET | Ruichips |
RU6099R | N-Channel Advanced Power MOSFET | Ruichips |
RU6099S | N-Channel Advanced Power MOSFET | Ruichips |
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