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What is SGL0263Z?

This electronic component, produced by the manufacturer "RF Micro Devices", performs the same function as "high performance SiGe HBT MMIC amplifier".


SGL0263Z Datasheet PDF - RF Micro Devices

Part Number SGL0263Z
Description high performance SiGe HBT MMIC amplifier
Manufacturers RF Micro Devices 
Logo RF Micro Devices Logo 


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SGL0263Z
1400MHz to
2500MHz Sili-
con Germa-
nium
Cascadable
Low Noise
Amplifier
SGL0263Z
1400MHz to 2500MHz SILICON GERMANIUM
CASCADABLE LOW NOISE AMPLIFIER
Package: SOT-363
Product Description
The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier
featuring 1 micron emitters with FT up to 50GHz. This device has an inter-
nal temperature compensation circuit permitting operation directly from
supply voltages as low as 2.5V. The SGL0263Z has been characterized at
VD=3V for low power and 4V for medium power applications. Only two DC-
blocking capacitors, 2 input matching components, a bias resistor, and an
optional RF choke are required for operation from 1400MHz to 2500MHz.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
Temperature
Compensation
Circuit
RF In
VS
RF Out / VS
Features
High Input/Output Intercept
Low Noise Figure: 1.3dB typ.
at 1900MHz
Low Power Consumption
Single Voltage Supply Opera-
tion
Internal Temperature Com-
pensation
Applications
Receivers, GPS, RFID
Cellular, Fixed Wireless, Land
Mobile
Parameter
Specification (VS=3V)
Min. Typ. Max.
Specification (VS=4V)
Min. Typ. Max.
Small Signal Gain
12.1 13.4 14.7
13.8
12.5
12.9
10.8
11.3
Output Power at 1dB Compres-
sion
3.5
5.5
11.4
6.8 12.3
7.9 12.8
Input Third Order Intercept
Point
Tone Spacing=1MHz, POUT per
tone = -13 dBm
7.5
9.5
15.1
13.5
16.8
15.5
18.4
Noise Figure
1.3 1.7
1.9
1.5 2.1
2.0 2.8
Input Return Loss
10.0
13.3
21.9
Output Return Loss
10.0
12.9
17.4
Reverse Isolation
20.7
21.0
Device Current
9.0
12.5
15.0
23.0
Thermal Resistance (Junction
to Lead)
255
Test Conditions: 1400MHz to 2500MHz Application Circuit, TLEAD=25°C, Z0=ZL=50
Unit Condition
dB 1900MHz
dB 2100MHz
dB 2400MHz
dBm 1900MHz
dBm 2100MHz
dBm 2400MHz
dBm 1900MHz
dBm
dBm
dB
dB
dB
dB
dB
dB
mA
°C/W
2100 MHz
2400 MHz
1900MHz, ZS=50
2100MHz, ZS=50
2400MHz, ZS=50
1900 MHz
1900 MHz
1900 MHz
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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SGL0263Z equivalent
SGL0263Z
1400MHz to 2500MHz Application Circuit
+VS
Application Circuit Element Values
Delay Elements
Ref. Z0 Phase shift @
Des. (Ohms) 2GHz (deg.)
Z1 50
Z2 50
Z3 50
11
13
6
RB2
CD1
RB1
(OPT)
CD2
B1
(OPT)
Reference
Designator
Value
Manufacturer & Part No.
LB 27 nH TOKO LL1608-FS27NJ
LM1 1.2 nH TOKO LL1608-FS1R2NJ
B1 1
1500 Ohms FAIR-RITE 2508051527y0
@100 MHz Ferrite Bead
4
CB LM1
RF
INPUT
Z1
CM1
Z2 SGL0263Z
36
5
Z3
CB, CD1
0.1 uF SAMSUNG CL10B103KBNC
LB
CB
CD2 22 pF ROHM MCH185AA220DJK
CM1 1.0 pF ROHM MCH185A1R0CK
RF
OUTPUT
RB1 1
RB2 2
47 Ohms PHILLIPS 9C06031A47R0 JL HFT
0 Ohms PHILLIPS 9C06031A0R00 JL HFT
Notes:
1. B1 and RB1 provide improved K-factor but are optional.
2. RB2 may be introduced as a voltage dropping resistor for use with
supply voltages greater than the desired device bias voltage.
Evaluation Board Layout
RF
IN CB
CM1
SIRENZA
M ICRODEV ICES
ECB-101761
Rev B
LM1 SGL0263Z
LB
RF
CB OUT
RB1
B1
RB2
CD1
C
D2
Note: Circuit board dielectric
material is GETEK,ML200C
+VS
GND
DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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Featured Datasheets

Part NumberDescriptionMFRS
SGL0263ZThe function is high performance SiGe HBT MMIC amplifier. RF Micro DevicesRF Micro Devices

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