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Datasheet SZM-5066Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SZM-5066Z | HIGH POWER LINEAR POWER AMPLIFIER SZM-5066Z
5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER
Package Style: QFN, 40-Pin, 6mm x 6mm
GND VC1B VC1B C1B C2B VB2B VB2B GND VBIAS2 GND
Features
Single Supply Voltage 5.0V 18dB Typical Gain Across
Band POUT = 25dBm <2.5% EVM 4.9GHz to 5.9GHz Frequency
Range
Applications
IEE |  RF Micro Devices | amplifier |
SZM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SZM | ZL connector Crimp
ZL CONNECTOR
• Retainer
5.0mm
(.197") pitch
Disconnectable Crimp style Wire-to-wire connectors
Features ––––––––––––––––––––––––
• Housing lances
The lances on the resilient housing are not affected by external force. They allow the contac  JST connector | | |
| 2 | SZM-01T-P0.7 | ZL Connector Crimp
ZL CONNECTOR
• Retainer
5.0mm
(.197") pitch
Disconnectable Crimp style Wire-to-wire connectors
Features ––––––––––––––––––––––––
• Housing lances
The lances on the resilient housing are not affected by external force. They allow the contac JST connector | | |
| 3 | SZM-2066Z | 2W POWER AMPLIFIER SZM-2066Z 2.4GHz to 2.7GHz 2W Power Ampli-
SZM-2066Zfier
2.4GHz to 2.7GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chi RF Micro Devices amplifier | | |
| 4 | SZM-2066Z | 2.4-2.7GHz 2W Power Amplifier
Preliminary
Product Description
Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs devic  Sirenza Microdevices amplifier | | |
| 5 | SZM-2166Z | 2W POWER AMPLIFIER SZM-2166Z 2.3GHz to 2.7GHz 2W Power Ampli-
SZM-2166Zfier
2.3GHz to 2.7GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip RF Micro Devices amplifier | | |
| 6 | SZM-2166Z | 2.3-2.7GHz 2W Power Amplifier Preliminary
Product Description
Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabr Sirenza Microdevices amplifier | | |
| 7 | SZM-3066Z | 2W POWER AMPLIFIER SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Ampli-
SZM-3066Zfier
3.3GHz to 3.8GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip RF Micro Devices amplifier | |
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