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PDF NE5531079A Data sheet ( Hoja de datos )
| Número de pieza | NE5531079A | |
| Descripción | 7.5V OPERATION SILICON RF POWER LDMOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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DATA SHEET
SILICON POWER MOS FET
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission
power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a
surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz
under the 7.5 V supply voltage.
FEATURES
• High output power
: Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
• High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
• High linear gain
: GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
• Surface mount package
: 5.7 × 5.7 × 1.1 mm MAX.
• Single supply
: VDS = 7.5 V MAX.
APPLICATIONS
• 460 MHz band radio systems
• 900 MHz band radio systems
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
NE5531079A
NE5531079A-A
79A (Pb-Free) W5 • 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
NE5531079A-T1 NE5531079A-T1-A
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
NE5531079A-T1A NE5531079A-T1A-A
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5531079A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10752EJ01V0DS (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
1 page  
NE5531079A
TYPICAL CHARACTERISTICS (TA = +25°C, IDset = 200 mA, unless otherwise specified)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
45
VDS = 3.6 V
40
4.5 V
6.0 V
7.5 V
35
Pout
30
4.5
4.0
3.5
3.0
25 2.5
20 2.0
15 1.5
10
5
0
–5 0
1.0
IDS
0.5
f = 460 MHz
0
5 10 15 20 25 30 35
Input Power Pin (dBm)
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
40 f = 460 MHz
VDS = 3.6 V
35 4.5 V
6.0 V
30 7.5 V
η add
25
80
70
60
50
20 40
15 GP 30
10 20
5 10
00
–5 0 5 10 15 20 25 30 35
Input Power Pin (dBm)
2f0, 3f0 vs. OUTPUT POWER
0
f = 460 MHz
–10
VDS = 3.6 V
4.5 V
6.0 V
–20 7.5 V
2f0
–30
–40
–50
–60
3f0
–70
15 20 25 30 35 40 45
Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
IM3/IM5 vs. 2 TONES OUTPUT POWER
0
VDS = 3.6 V
–10
4.5 V
6.0 V
7.5 V
–20
IM3
–30
–40
IM5
–50
–60
–70
10
f1 = 460 MHz
f2 = 461 MHz
15 20 25 30 35 40
2 Tones Output Power Pout (dBm)
Data Sheet PU10752EJ01V0DS
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NE5531079A.PDF ] | |
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