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What is AO3418L?

This electronic component, produced by the manufacturer "KERSEMI", performs the same function as "N-Channel Enhancement Mode Field Effect Transistor".


AO3418L Datasheet PDF - KERSEMI

Part Number AO3418L
Description N-Channel Enhancement Mode Field Effect Transistor
Manufacturers KERSEMI 
Logo KERSEMI Logo 


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Features
VDS (V) = 30V
ID = 3.8 A
RDS(ON) < 60m(VGS = 10V)
RDS(ON) < 70m(VGS = 4.5V)
RDS(ON) < 155m(VGS = 2.5V)
AO3418, AO3418L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
TO-236
(SOT-23)
Top
View
General Description
The AO3418 uses advanced trench technology to
provide excellent RDS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO3418L ( Green Product ) is offered in
a lead-free package.
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
3.8
3.1
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
2014-5-29
1 www.kersemi.com


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AO3418L electronic component.


Information Total 4 Pages
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AO3418The function is N-Channel Enhancement Mode Field Effect Transistor. KERSEMIKERSEMI

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