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PDF SDF07N50T Data sheet ( Hoja de datos )
| Número de pieza | SDF07N50T | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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SDF07N50T
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 2.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
500V 7A 1.2 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220F Package.
D
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDF07N50PT
TO-220F
Marking Code
07N50T
Delivery Mode
Tube
RoHS Status
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
500
±30
7.0
4.9
20
225
31
16
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
4.8 °C/W
62.5 °C/W
Details are subject to change without notice.
1
Dec,31,2013
www.samhop.com.tw
1 page  
SDF07N50T
Ver 2.1
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
F igure 12a.
V( BR )D S S
tp
IAS
Unclamped Inductive Waveforms
F igure 12b.
2
1
0.1
0.01
0.00001
D=0.5
0.2
0.1
0.05
0.02
0.01
S ingle P uls e
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
0.0001
0.001
0.01
0.1
1
S quare Wave P uls e Duration (ms ec)
Figure 13b. Normalized Thermal Transient Impedance Curve for SDF07N50T
10
Dec,31,2013
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SDF07N50T.PDF ] | |
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