DMC25D0UVT Datasheet PDF - Diodes
Part Number | DMC25D0UVT | |
Description | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
Manufacturers | Diodes | |
Logo | ||
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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
Q2
V(BR)DSS
25V
-30V
RDS(ON)
4Ω @ VGS = 4.5V
80mΩ @ VGS= -12V
125mΩ @ VGS= -4.5V
ID
TA = +25°C
0.4 A
-3.2 A
-2.6 A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Load Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate on N-Channel (>6kV Human Body Model)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
D1 D2
TSOT26
G1 G2
Top View
Top View
Internal Circuit
Gate Protection
Diode
S1
Q1 N-Channel MOSFET
S2
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC25D0UVT-7
DMC25D0UVT-13
Case
TSOT26
TSOT26
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
2015
C
Month
Code
Jan Feb
12
DMC25D0UVT
Document number: DS37508 Rev. 3 - 2
C5D
C5D = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y= Year (ex: C = 2015)
M = Month (ex: 9 = September)
2016
D
Mar
3
2017
E
2018
F
Apr May Jun
456
Jul
7
1 of 11
www.diodes.com
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
April 2015
© Diodes Incorporated
|
|
DMC25D0UVT
2
1.5
VGS=2.5V,
1 ID=100mA
VGS=4.5V,
0.5 ID=500mA
0
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with
Temperature
150
1
0.9 VGS=0V
0.8
0.7
0.6
0.5
0.4
0.3 TA=150℃
TA=85℃
0.2 TA=125℃
0.1
0
TA=25℃
TA=-55℃
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
1.5
8
6
1.2
1.1
1
ID=1mA
0.9
0.8
0.7 ID=250µA
0.6
0.5
0.4
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Theshold Variation vs Junction
Temperature
100
f=1MHz
Ciss
10 Coss
Crss
1
0
5 10 15
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
RDS(ON)
Limited
PW=1ms PW=100µs
1
20
4
VDS=5V, ID=200mA
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Qg (nC)
Figure 11. Gate Charge
0.1
0.01
0.1
DC
PW=10s
PW=1s
PW=100ms
TJ(Max)=150℃
TA=25℃
PW=10ms
VGS=4.5V
Single Pulse
DUT on 1*MRP Board
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMC25D0UVT
Document number: DS37508 Rev. 3 - 2
5 of 11
www.diodes.com
April 2015
© Diodes Incorporated
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