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Datasheet 1N5408G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5408G | GLASS PASSIVATED SILICON RECTIFIER 1N5400G THRU 1N5408G
GLASS PASSIVATED SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
DO-201AD
0.220 (5.6) 0.197(5.0)
DIA.
1.0 (25.4) MIN.
0.375(9.5) 0.285(7.2)
FEATURES
The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Const |  Shunye | rectifier |
| 2 | 1N5408G | Glass Passivated Rectifiers CREAT BY ART
Glass Passivated Rectifiers
FEATURES
- Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free accor |  Taiwan Semiconductor | rectifier |
| 3 | 1N5408G | 3.0A GLASS PASSIVATED RECTIFIER 1N5400G - 1N5408G
3.0A GLASS PASSIVATED RECTIFIER Features
· · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Plastic Material has UL Flammability Classification 94V-0
A
B
A
D
C
Mechanical Da |  Diodes Incorporated | rectifier |
| 4 | 1N5408G | GLASS PASSIVATED JUNCTION RECTIFIER 1N5400G THRU 1N5408G
GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature metallurgically bonded construction Glass passivated cavity-free junction |  GOOD-ARK Electronics | rectifier |
| 5 | 1N5408G | 3.0 AMP GLASS PASSIVATED RECTIFIERS 1N5400G
THRU
1N5408G
3.0 AMP GLASS PASSIVATED RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT FEATURES
* Low forward voltage drop * High current capability * High reliability * High surge current capability * Glass passivated junction
3.0 Ampere
DO-27
.220(5.6) .197(5.0) DIA.
1.0(25.4) MIN.
|  Bytes | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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