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What is UPA2793AGR?

This electronic component, produced by the manufacturer "Renesas", performs the same function as "N- AND P-CHANNEL MOSFET".


UPA2793AGR Datasheet PDF - Renesas

Part Number UPA2793AGR
Description N- AND P-CHANNEL MOSFET
Manufacturers Renesas 
Logo Renesas Logo 


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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2793AGR
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2793AGR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
FEATURES
Low on-state resistance
N-channel RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)
P-channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)
Low input capacitance
N-channel Ciss = 2200 pF TYP.
P-channel Ciss = 2200 pF TYP.
Built-in gate protection diode
Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
85
14
5.37 MAX.
N-channel 1 : Source 1
2 : Gate 1
7, 8: Drain 1
P-channel 3 : Source 2
4 : Gate 2
5, 6: Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
μ PA2793AGR-E1-AT Note
μ PA2793AGR-E2-AT Note
Pure Sn
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
PACKAGE
Power SOP8
EQUIVALENT CIRCUITS
N-channel
P-channel
Drain
Drain
Gate
Body
Diode
Gate
Body
Diode
Gate
Protection
Diode
Source
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19921EJ1V0DS00 (1st edition)
Date Published August 2009 NS
Printed in Japan
2009

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UPA2793AGR equivalent
μ PA2793AGR
TYPICAL CHARACTERISTICS (TA = 25°C)
(1) N-channel
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
2.5
2 units
2
Mounted on ceramic
substrate of
2000 mm2 x 1.6 mm
1.5 1 unit
1
0.5
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
RDS(on) Limited
(VGS = 10 V)
10
ID(pulse)
ID(DC)
1
Power
Dissip at io n
DC
Limit ed
0.1 Secondary Breakdown Limited
Single pulse
0.01
Mounted on ceramic substrate of
2000 mm2 x 1.6 mm
0.01 0.1
1
10
100
VDS - Drain to Source Voltage - V
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single pulse
Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
Rth(ch-A) = 73.5°C/Wi
Rth(ch-A) = 62.5°C/Wi
10
1
0.1
100 μ
1m
10 m
100 m
1
PW - Pulse Width – s
Rth(ch-A) (1 unit)
Rth(ch-A) (2 units)
10 100 1000
Data Sheet G19921EJ1V0DS
5


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Featured Datasheets

Part NumberDescriptionMFRS
UPA2793AGRThe function is N- AND P-CHANNEL MOSFET. RenesasRenesas

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