DataSheet39.com

What is 2PG006?

This electronic component, produced by the manufacturer "Panasonic", performs the same function as "Silicon N-channel enhancement IGBT".


2PG006 Datasheet PDF - Panasonic

Part Number 2PG006
Description Silicon N-channel enhancement IGBT
Manufacturers Panasonic 
Logo Panasonic Logo 


There is a preview and 2PG006 download ( pdf file ) link at the bottom of this page.





Total 4 Pages



Preview 1 page

No Preview Available ! 2PG006 datasheet, circuit

IGBT
This product complies with the RoHS Directive (EU 2002/95/EC).
2PG006
Silicon N-channel enhancement IGBT
For plasma display panel drive
For high speed switching circuits
Features
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V
High-speed switching: tf = 175 ns (typ.)
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-emitter voltage (E-B short)
VCES
430
V
Gate-emitter voltage (E-B short)
VGES –30 to +35
V
Collector current
IC 40 A
Peak collector current *
ICP 230
A
Power dissipation
40 W
Ta = 25°C
PC
2.0
W
Junction temperature
Tj 150 °C
Storage temperature
Tstg –55 to +150 °C
Note) *: Assurance of repetitive pulse. (Repetitive period 5 ms on-duty 20%)
But, it must stay within 40% of all that the time impressed pulse repetitively.
Package
Code
TO-220D-A1
Marking Symbol: 2PG006
Pin Name
1. Gate
2. Collector
3. Emitter
Internal Connection
C
G
E
T 5.0 00µs, On-duty 20%
Electrical Characteristics TC = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-emitter voltage (E-B short)
Collector-emitter cutoff current (E-B short) *
Gate-emitter cutoff current (E-B short)
VCES
ICES
IGES
IC = 1 mA, VGE = 0
VCE = 344 V, VGE = 0
VGE = ±35 V, –30 V, VCE = 0
430
Gate-emitter threshold voltage
VGE(th) VCE = 10 V, IC = 1.0 mA
3.0
Collector-emitter saturation voltage
Collector-emitter reverse break down voltage
Short-circuit input capacitance (Common emitter)
Short-circuit output capacitance (Common emitter)
Reverse transfer capacitance (Common emitter)
VCE(sat)
–VCE
Cies
Coes
Cres
VGE = 15 V, IC = 40 A
IC = –100 mA, VGE = 15 V
VCE = 25 V, VGE = 0, f = 1 MHz
1.75
18 22.5
1 200
130
20
Gate charge load
Qg
54
Gate-emitter charge
Qge VCC = 200 V, IC = 40 A, VGE = 15 V
7
Gate-collector charge
Qgc
22
Turn-on delay time
td(on)
65
Rise time
Turn-off delay time
tr
td(off)
VCC = 200 V, IC = 40 A,
RL 5 , VGE = 15 V
400
185
Fall time
tf
175
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ICES is 100% tested according to the ICES inspection standards. (< 1.0 mA under the conditions of VCE = 344 V, VGE = 0)
Max
5.0
±1.0
5.5
2.4
260
Publication date: February 2009
SJN00006AED
Unit
V
mA
mA
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
1


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2PG006 electronic component.


Information Total 4 Pages
Link URL [ Copy URL to Clipboard ]
Download [ 2PG006.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
2PG001The function is N-channel enhancement mode IGBT. PanasonicPanasonic
2PG002The function is N-Channel Enhancement Mode IGBT. PanasonicPanasonic
2PG006The function is Silicon N-channel enhancement IGBT. PanasonicPanasonic

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

2PG0     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search