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PDF A1182 Data sheet ( Hoja de datos )
| Número de pieza | A1182 | |
| Descripción | 30V, 0.5A, PNP Transistor, 2SA1182 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de A1182 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1182
2SA1182
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Unit: mm
• Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = −6 V, IC = −400 mA
• Complementary to 2SC2859.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −35 V
Collector-emitter voltage
VCEO −30 V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−500
mA
Base current
IB −50 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = −35 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE (1) (Note) VCE = −1 V, IC = −100 mA
hFE (2) (Note) VCE = −6 V, IC = −400 mA
VCE (sat) IC = −100 mA, IB = −10 mA
VBE VCE = −1 V, IC = −100 mA
fT VCE = −6 V, IC = −20 mA
Cob VCB = −6 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
70 ⎯ 400
⎯
25 ⎯ ⎯
⎯ −0.1 −0.25 V
⎯ −0.8 −1.0 V
⎯ 200 ⎯ MHz
⎯ 13 ⎯ pF
Note: hFE (1) classification O(0): 70 to 140, Y(Y): 120 to 240,
hFE (2) classification O: 25 (min),
Y: 40 (min),
Marking
GR(G): 200 to 400
GR: 70 (min)
(
) Marking Symbol
ZO
Z: Type Name
O: hFE Rank
1
Start of commercial production
1982-12
2014-03-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet A1182.PDF ] | |
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