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PDF AUIRFP4110 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFP4110 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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AUTOMOTIVE GRADE
AUIRFP4110
Features
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® Power MOSFET
D
VDSS
100V
RDS(on) typ.
3.7m
max 4.5m
G
ID (Silicon Limited)
180A
S ID (Package Limited) 120A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
G
Gate
S
D
G
TO-247AC
D
Drain
S
Source
Ordering Information
Base part number Package Type
AUIRFP4110
TO-247AC
Standard Pack
Form
Quantity
Tube
25
Complete Part Number
AUIRFP4110
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
180
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
130
120
A
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
670
370 W
2.5 W/°C
VGS Gate-to-Source Voltage
EAS (Thermally limited) Single Pulse Avalanche Energy
± 20
190
V
mJ
IAR
EAR
dv/dt
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
108 A
37 mJ
5.3 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.402
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
January 29, 2014
1 page  
1000
100 TJ = 175°C
10000
1000
AUIRFP4110
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TJ = 25°C
10
100
100µsec
1
0.1
0.0
VGS = 0V
0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode Forward Voltage
180
160 Limited By Package
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical Coss Stored Energy
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
DC 1msec
10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
90
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
Fig 10. Drain-to–Source Breakdown Voltage
800
ID
700 TOP 17A
27A
600 BOTTOM 108A
500
400
300
200
100
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
175
Fig 12. Threshold Voltage vs. Temperature
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 29, 2014
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AUIRFP4110.PDF ] | |
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