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PDF STGP15M65DF2 Data sheet ( Hoja de datos )
| Número de pieza | STGP15M65DF2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STGP15M65DF2
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 15 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represent an optimum compromise
in performance to maximize the efficiency of
inverter systems where low-loss and short-circuit
capability are essential. Furthermore, a positive
VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGP15M65DF2
Table 1: Device summary
Marking
G15M65DF2
Package
TO-220
Packing
Tube
November 2015
DocID028489 Rev 2
This is information on a product in full production.
1/17
www.st.com
1 page  
STGP15M65DF2
Symbol
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
24 - ns
tr Current rise time
7.8 - ns
(di/dt)on
td(off)
tf
Eon(1)
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching losses
VCE = 400 V, IC = 15 A,
VGE = 15 V, RG = 12 Ω
(see Figure 29: " Test circuit
for inductive load switching" )
1570 - A/µs
93 - ns
106 -
ns
0.09 - mJ
Eoff(2) Turn-off switching losses
0.45 - mJ
Ets Total switching losses
0.54 - mJ
td(on) Turn-on delay time
24.8 -
ns
tr Current rise time
9.2 - ns
(di/dt)on
td(off)
tf
Eon
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching losses
VCE = 400 V, IC = 15 A,
VGE = 15 V, RG = 12 Ω
TJ = 175 °C (see Figure 29: "
Test circuit for inductive load
switching" )
1300 - A/µs
96 - ns
169 -
ns
0.22 - mJ
Eoff Turn-off switching losses
0.61 - mJ
Ets Total switching losses
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 15 V,
TJstart = 150 °C
0.83
6
-
-
mJ
µs
Notes:
(1)Energy losses include reverse recovery of the diode.
(2)Turn-off losses also include the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Qrr
Irrm
dIrr/dt
Err
trr
Qrr
Irrm
dIrr/dt
Err
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
Reverse recovery energy
IF = 15 A, VR = 400 V,
VGE = 15 V (see Figure 29: "
Test circuit for inductive load
switching") di/dt = 1000 A/µs
IF = 15 A, VR = 400 V,
VGE = 15 V TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
di/dt = 1000 A/µs
- 142 -
- 525 -
- 13.4 -
ns
nC
A
- 790 - A/µs
- 64 -
- 241 -
- 1690 -
- 20 -
µJ
ns
nC
A
- 420 - A/µs
- 176 -
µJ
DocID028489 Rev 2
5/17
5 Page 
STGP15M65DF2
Electrical characteristics
Figure 28: Thermal impedance for diode
DocID028489 Rev 2
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STGP15M65DF2.PDF ] | |
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