RS1E200BN Datasheet PDF - ROHM Semiconductor
Part Number | RS1E200BN | |
Description | Nch 30V 20A Middle Power MOSFET | |
Manufacturers | ROHM Semiconductor | |
Logo | ||
There is a preview and RS1E200BN download ( pdf file ) link at the bottom of this page. Total 12 Pages |
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Nch 30V 20A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
3.9mΩ
±20A
3.0W
lFeatures
1) Low on - resistance.
2) High Power small mold Package (HSOP8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
HSOP8
lInner circuit
Datasheet
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
RS1E200BN
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
VDSS
ID
ID,pulse*1
VGSS
PD*2
PD*3
Tj
Tstg
30
±20
±80
±20
3.0
25
150
-55 to +150
V
A
A
V
W
W
℃
℃
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20140825 - Rev.001
|
|
RS1E200BN
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
20140825 - Rev.001
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RS1E200BN electronic component. |
Information | Total 12 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ RS1E200BN.PDF Datasheet ] |
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