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PDF RQ6E030AT Data sheet ( Hoja de datos )
| Número de pieza | RQ6E030AT | |
| Descripción | Pch -30V -3.0A Middle Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RQ6E030AT (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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RQ6E030AT
Pch -30V -3.0A Middle Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
-30V
91mΩ
±3.0A
1.25W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT6).
3) Pb-free lead plating ; RoHS compliant
lOutline
TSMT6
lInner circuit
Datasheet
lApplication
Switching
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
TCR
JS
Symbol
VDSS
ID
ID,pulse*2
VGSS
EAS*3
IAS*3
PD*4
Tj
Tstg
Value
-30
±3.0
±12
±20
3.3
-3.0
1.25
150
-55 to +150
Unit
V
A
A
V
mJ
A
W
℃
℃
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20141024 - Rev.001
1 page  
RQ6E030AT
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
20141024 - Rev.001
5 Page 
RQ6E030AT
lDimensions
Datasheet
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
11/11
20141024 - Rev.001
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet RQ6E030AT.PDF ] | |
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| RQ6E030AT | Pch -30V -3.0A Middle Power MOSFET | ROHM Semiconductor |
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