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PDF STB33N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STB33N60DM2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB33N60DM2, STP33N60DM2,
STW33N60DM2
N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2
Power MOSFET in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
Features
Order code
STB33N60DM2
STP33N60DM2
STW33N60DM2
VDS @ TJmax.
650 V
650 V
650 V
RDS(on) max.
0.130 Ω
0.130 Ω
0.130 Ω
ID
24 A
24 A
24 A
Figure 1: Internal schematic diagram
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Order code
STB33N60DM2
STP33N60DM2
STW33N60DM2
Description
These high voltage N-channel Power MOSFETs
are part of the MDmesh™ DM2 fast recovery
diode series. They offer very low recovery charge
(Qrr) and time (trr) combined with low RDS(on),
rendering them suitable for the most demanding
high efficiency converters and ideal for bridge
topologies and ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
33N60DM2
33N60DM2
33N60DM2
D²PAK
TO-220
TO-247
Tape and reel
Tube
Tube
November 2015
DocID026854 Rev 2
This is information on a product in full production.
1/20
www.st.com
1 page  
STB33N60DM2, STP33N60DM2, STW33N60DM2
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD Source-drain current
- 24 A
ISDM(1) Source-drain current (pulsed)
- 96 A
VSD(2) Forward on voltage
VGS = 0 V, ISD = 24 A
-
1.6 V
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 24 A, di/dt = 100 A/µs, - 150
VDD = 60 V (see Figure 20:
"Test circuit for inductive
- 0.5
load switching and diode
recovery times")
- 8.8
ns
µC
A
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 24 A, di/dt = 100 A/µs, - 316
VDD = 60 V, Tj = 150 °C
- 2.85
(see Figure 20: "Test circuit
for inductive load switching - 18
and diode recovery times")
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
DocID026854 Rev 2
5/20
5 Page 
STB33N60DM2, STP33N60DM2, STW33N60DM2
Package information
Table 10: D²PAK (TO-263) type A package mechanical data
Dim.
Min.
mm
Typ.
Max.
A 4.40
4.60
A1 0.03
0.23
b 0.70
0.93
b2 1.14
1.70
c 0.45
0.60
c2 1.23
1.36
D 8.95
9.35
D1 7.50 7.75
8.00
D2 1.10 1.30
1.50
E 10
10.40
E1 8.50 8.70
8.90
E2 6.85 7.05
7.25
e 2.54
e1 4.88
5.28
H 15
15.85
J1 2.49
2.69
L 2.29
2.79
L1 1.27
1.40
L2 1.30
1.75
R 0.4
V2 0°
8°
DocID026854 Rev 2
11/20
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet STB33N60DM2.PDF ] | |
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