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PDF SiHF18N50C Data sheet ( Hoja de datos )
| Número de pieza | SiHF18N50C | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SiHP18N50C, SiHF18N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560
VGS = 10 V
76
21
29
Single
TO-220
TO-220 FULLPAK
0.225
D
FEATURES
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
• Improved trr/Qrr
• Improved Gate Charge
• High Power Dissipations Capability
• Compliant to RoHS Directive 2002/95/EC
G
S
D
G
GDS
ORDERING INFORMATION
Package
Lead (Pb)-free
S
N-Channel MOSFET
TO-220
SiHP18N50C-E3
TO-220 FULLPAK
SiHF18N50C-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentb
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Linear Derating Factor
TO-220
FULLPAK
Single Pulse Avalanche Energyc
EAS
Maximum Power Dissipation
TO-220
FULLPAK
PD
Peak Diode Recovery dV/dtd
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A.
d. ISD ≤ 18 A, dI/dt ≤ 380 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
e. 1.6 mm from case.
LIMIT
500
± 30
18
11
72
1.8
0.3
361
223
38
5
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91374
S09-1257-Rev. B, 13-Jul-09
www.vishay.com
1
1 page  
SiHP18N50C, SiHF18N50C
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
Pulse Time (s)
0.1
Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case (TO-220)
1
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3 10-2 0.1
Pulse Time (s)
1
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case (TO-220FP)
10
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 12a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 12b - Switching Time Waveforms
Document Number: 91374
S09-1257-Rev. B, 13-Jul-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiHF18N50C.PDF ] | |
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