|
|
PDF STGB15H60DF Data sheet ( Hoja de datos )
| Número de pieza | STGB15H60DF | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STGB15H60DF (archivo pdf) en la parte inferior de esta página. Total 23 Páginas | ||
|
No Preview Available !
STGB15H60DF,
STGF15H60DF, STGP15H60DF
Trench gate field-stop IGBT, H series
600 V, 15 A high speed
Datasheet − production data
TAB
3
1
D²PAK
TAB
Features
• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode
3
2
1
TO-220FP
3
2
1
TO-220
Applications
• Motor control
• UPS, PFC
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. This IGBT series offers the optimum
compromise between conduction and switching
losses, maximizing the efficiency of very high
frequency converters. Furthermore, a positive
VCE(sat) temperature coefficient and very tight
parameter distribution result in easier paralleling
operation.
E (3)
Order codes
STGB15H60DF
STGF15H60DF
STGP15H60DF
Table 1. Device summary
Marking
Packages
GB15H60DF
D²PAK
GF15H60DF
TO-220FP
GP15H60DF
TO-220
Packaging
Tape and reel
Tube
Tube
October 2013
This is information on a product in full production.
DocID025113 Rev 2
1/23
www.st.com
1 page  
STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Current rise time
(di/dt)on Turn-on current slope
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
td(on) Turn-on delay time
tr Current rise time
(di/dt)on Turn-on current slope
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
tsc Short-circuit withstand time
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C
VCC ≤ 360 V, VGE = 15 V,
RG = 10 Ω
24.5 - ns
8.2 - ns
1470 - A/µs
-
25 ns
-
9 - ns
1370 - A/µs
18 - ns
118 - ns
69 - ns
27 - ns
124 - ns
101 - ns
3 5 - µs
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Eon (1)
Eoff (2)
Ets
Eon(1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C
1. Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
-
-
-
-
-
-
Typ.
136
207
343
224
329
553
Max. Unit
- µJ
- µJ
- µJ
- µJ
- µJ
- µJ
DocID025113 Rev 2
5/23
23
5 Page 
STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics
Figure 26. Switching times vs. gate resistance Figure 27. Reverse recovery current vs. diode
current slope
t
(ns)
GIPD041020131556FSR
TJ= 175°C, VGE= 15V,
IC= 15A, VCC= 400V
tdoff
Irm GIPD041020131622FSR
(A) IF = 15A, Vr = 400V
20
100 tf
TJ =175°C
15
tdon
10
tr
10
TJ =25°C
5
1
2 12 22 32 42 RG(Ω)
0
0 200 400 600 800 di/dt(A/μs)
Figure 28. Reverse recovery time vs. diode Figure 29. Reverse recovery charge vs. diode
current slope
current slope
trr
(µs)
160
GIPD041020131630FSR
IF = 15A, Vr = 400V
Qrr
(nC)
IF = 15A, Vr = 400V
600
GIPD041020131635FSR
TJ =175°C
120
TJ =175°C
80
40
TJ =25°C
0
0 200 400 600 800 di/dt(A/μs)
400
TJ =25°C
200
0
0 200 400 600 800 di/dt(A/μs)
Figure 30. Reverse recovery energy vs. diode
current slope
Err
(µJ)
GIPD041020131638FSR
IF = 15A, Vr = 400V
160
TJ =175°C
120
80
TJ =25°C
40
0
0 200 400 600 800 di/dt(A/μs)
DocID025113 Rev 2
11/23
23
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet STGB15H60DF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STGB15H60DF | Trench gate field-stop IGBT | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |